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STE: 作品数：614被引量：1036H指数：13; 导出分析报告; 相关领域：医药卫生更多>>; 相关作者：杨琴田文寿赵余庆王明建江峰更多>>; 相关机构：华东师范大学华中科技大学山东大学南京师范大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划河北省自然科学基金国家教育部博士点基金更多>>

Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire: 《Chinese Physics B》2024年第8期397-403,共7页郝景刚张彦芳张贻俊徐科韩根全叶建东; Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605403);the National Natural Science Foundation of China (Grant Nos.62234007,62241407,62293521,62304238,62241407,U21A20503,and U21A2071);the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2020B010174002);the Cultivation Project for Youth Teachers in Jiangsu Province;Jiangsu Funding Program for Excellent Postdoctoral Talent。; Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by ...; 关键词：growth mode miscut angle crystalline quality surface morphology

Wave mode computing method using the step-split Padé parabolic equation: 《Chinese Physics B》2022年第9期354-361,共8页Chuan-Xiu Xu Guang-Ying Zheng; Project supported by Young Elite Scientist Sponsorship Program by CAST(Grant No.YESS20200330).; Models based on a parabolic equation(PE)can accurately predict sound propagation problems in range-dependent ocean waveguides.Consequently,this method has developed rapidly in recent years.Compared with normal mode th...; 关键词：parabolic equation propagation matrix eigenvalue decomposition

Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect: 《Chinese Physics B》2021年第4期497-501,共5页Bin Wang Xin-Long Shi Yun-Feng Zhang Yi Chen Hui-Yong Hu Li-Ming Wang; Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029)。; A novel n-type junctionless field-effect transistor(JLFET) with a step-gate-oxide(SGO) structure is proposed to suppress the gate-induced drain leakage(GIDL) effect and off-state current I_(off).Introducing a 6-nm-thi...; 关键词：junctionless field-effect transistor(FET) gate-induced drain leakage(GIDL) step-gate-oxide offstate current

Tunable in-plane spin orientation in Fe/Si(557) film by step-induced competing magnetic anisotropies: 《Chinese Physics B》2016年第12期435-440,共6页汤进何为张永圣李岩张伟 Syed Sheraz Ahmad 张向群成昭华; Project supported by the National Basic Research Program of China(Grant Nos.2015CB921403 and 2016YFA0300701);the National Natural Sciences Foundation of China(Grant Nos.51427801,11374350,11274360,and 11274361); the spin-reorientation transition from out-of-plane to in-plane in Fe/Si film is widely reported, the tuning of in-plane spin orientation is not yet well developed. Here, we report the thickness-, temperature- and Cu-...; 关键词：Fe/Si （557） films spin-reorientation transition competing magnetic anisotropies

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface: 《Chinese Physics B》2015年第11期452-459,共8页韩超张玉明宋庆文汤晓燕张义门郭辉王悦湖; supported by the Key Specific Projects of Ministry of Education of China(Grant No.625010101);the National Natural Science Foundation of China(Grant No.61234006);the Natural Science Foundation of Shaan Xi Province,China(Grant No.2013JQ8012);the Doctoral Fund of Ministry of Education of China(Grant No.20130203120017);the Specific Project of the Core Devices,China(Grant No.2013ZX0100100-004); This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on ...; 关键词：4H-SIC P-TYPE ohmic contact ALLOYING step bunching

Fabrication and properties of high performance YBa_2Cu_3O_(7-δ) radio frequency SQUIDs with step-edge Josephson junctions被引量：1: 《Chinese Physics B》2014年第9期419-422,共4页刘政豪魏玉科王达张琛马平王越; supported by the National Basic Research Program of China(Grant No.2011CBA00106);the National Natural Science Foundation of China(Grant No.11074008);the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20100001120006); We describe the fabrication of high performance YBa2Cu3O7-δ （YBCO） radio frequency （RF） superconducting quantum interference devices （SQUIDs）, which were prepared on 5 mm×5 mm LaAlO3 （LAO） substrates by empl...; 关键词：superconducting quantum interference device （SQUID） YBa2Cu3O7-δ （YBCO） step-edge junction radio frequency

0.6-eV bandgap In_(0.69)Ga_(0.31)As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_(1-y)buffers被引量：2: 《Chinese Physics B》2013年第2期385-388,共4页季莲陆书龙江德生赵勇明谭明朱亚棋董建荣; Project supported by the National Basic Research Program of China (Grant No. 61176128);the Knowledge Innovation Project of the Chinese Academy of Sciences;Suzhou Municipal Solar Cell Research Project,China (Grant No. SYG201145); Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic（TPV） devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition（MOCVD）.Compositionally undulat...; 关键词：In0.69Ga0.39As thermophotovoltaic devices InAsyP1-y buffer

Maturing process of solitary wave train in a step-down chain: 《Chinese Physics B》2012年第2期368-372,共5页Xia Ji-Hong Wang Ping-Jian Liu Chang-Song; supported by the National Natural Science Foundation of China (Grant No.11074253);the Research Foundation of Chongqing University of Arts and Sciences (Grant No.Z2011RCYJ05);the Foundation supported by the Center for Computational Science,Hefei Institutes of Physical Sciences; In a step-down chain a solitary wave （SW） evolves into an SW train （SWT）, but the formation of well-defined SWT takes time and space and little is known of the process from immature into mature SWT. We therefore p...; 关键词：granular systems solitary wave molecular dynamics simulation

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses被引量：3: 《Chinese Physics B》2011年第12期395-399,共5页马晓华焦颖马平贺强马骥刚张凯张会龙张进成郝跃; Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600);the National Natural Science Foundation of China (Grant No. 61106106);the Fundamental Research Funds for the Central Universities (Grant No. K50510250006); In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step...; 关键词：inverse piezoelectric effects degradation mechanisms hot electron effects DC electrical step stresses AlGaN/GaN HEMTs reliability

Radiation energy flux of Dirac field of static spherically symmetric black holes: 《Chinese Physics B》2010年第9期196-201,共6页孟庆苗蒋继建李中让王帅; supported by the National Natural Science Foundation of China (Grant No.10773002);the Technology Planning Project of Education Bureau of Shandong Province,China (Grant No.J07WJ49); By the statistical entropy of the Dirac field of the static spherically symmetric black hole, the result is obtained that the radiation energy flux of the black hole is proportional to the quartic of the temperature o...; 关键词：static spherically symmetric black hole thin film model generalised Stenfan-Boltzmann law radiation energy flux

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