Project supported by the State Key Development Program for Basic Research of China(No.2006CB300403);the National Hi-Tech Research and Development Program of China(No.2007AA03Z308);the Fund for Creative Research of the National Natural Science Foundation of China(No.60721004)
Nanoscale refinement on a (100) oriented silicon-on-insulator (SOI) wafer was introduced by using tetra-methyl-ammonium hydroxide (TMAH, 25 wt%) anisotropic silicon etchant, with temperature kept at 50 ℃ to ach...
Project supported by the National High Technology Research and Development Program of China(No.2007AA05Z437)
Etching was performed on (100) silicon wafers using silicon-dissolved tetramethylammonium hydroxide (TMAH) solutions without the addition of surfactant. Experiments were carried out in different TMAH concentration...