云南高校图书馆联盟文献共享服务平台- TRAPPING

TRAPPING: 作品数：422被引量：528H指数：8; 导出分析报告; 相关领域：理学机械工程更多>>; 相关作者：夏飞马晓初江俊刘顺英胡文浩更多>>; 相关机构：中国科学院浙江大学云南大学华东师范大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划广东省自然科学基金中国博士后科学基金更多>>

Long-Lifetime Optical Trapping of a ^(40)Ca^(+) Ion: 《Chinese Physics Letters》2024年第11期45-52,共8页Zheng Chen Miao Wang Baolin Zhang Huaqing Zhang Zixiao Ma Ruming Hu Yao Huang Kelin Gao Hua Guan; supported by the National Basic Research R&D Program of China(Grant Nos.2022YFB3904001 and 2018YFA0307500);the National Natural Science Foundation of China(Grant Nos.12022414 and 11934014);the Natural Science Foundation of Hubei Province(Grant No.2022CFA013);the CAS Project for Young Scientists in Basic Research(Grant Nos.YSBR-085 and YSBR-055)。; We have experimentally achieved the all-optical trapping of a ^(40)Ca^(+)ion.An optical dipole trap was established using a high-power,far-detuned,tightly focused laser with a wavelength of 532 nm.The single ^(40)Ca^(...; 关键词：TRAPPING DIPOLE eliminate

Pressure-Induced Distinct Self-Trapped Exciton Emission in Sb^(3+)-Doped Cs_(2)NaInCl_(6)Double Perovskite: 《Chinese Physics Letters》2024年第6期18-43,共26页冯友佳陈亚平王乐瑶王家祥常断华袁亦方武敏付瑞净张丽丽王庆林王凯郭海中王玲瑞; supported by the National Key Research and Development Program of China(Grant Nos.2021YFA1400200 and2021YFA0718701);the National Natural Science Foundation of China(Grant Nos.U2032127,11904322,12104411,12174347);the Natural Science Foundation of Henan province of China(Grant No.202300410356);the China Postdoctoral Science Foundation(Grant Nos.2019M652560 and 2020M682326);the CAS Interdisciplinary Innovation Team(Grant No.JCTD-2019-01);the Postdoctoral Research Grant in Henan Province(Grant No.1902013);the Science Foundation for Highlevel Talents of Wuyi University(Grant No.2021AL019)。; The Cs_(2)NaInCl_(6) double perovskite is one of the most promising lead-free perovskites due to its exceptional stability and straightforward synthesis.However,it faces challenges related to inefficient photoluminesc...; 关键词：synthesis PEROVSKITE TRAPPING

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates: 《Chinese Physics Letters》2017年第9期95-99,共5页Zhao-Zhao Hou Gui-Lei Wang Jin-Juan Xiang Jia-Xin Yao Zhen-Hua Wu Qing-Zhu Zhang Hua-Xiang Yin; Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007;the National Key Research and Development Program of China under Grant No 2016YFA0301701;the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112; A novel high-κ~ A1203/HfO2/AI203 nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibit...; 关键词：Dielectrics and SiGe Epitaxial Substrates Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High

Trapping and Cooling of Single Atoms in an Optical Microcavity by a Magic-Wavelength Dipole Trap: 《Chinese Physics Letters》2015年第10期68-71,共4页李文芳杜金锦文瑞娟李刚张天才; Supported by the National Basic Research Program of China under Grant No 2012CB921601;the National Natural Science Foundation of China under Grant Nos 11125418,61121064,61275210,61227902 and 91336107; We present trapping and cooling of single cesium atoms inside a microcavity by means of an intracavity far-off- resonance trap （FORT）. By the ＇magic＇ wavelength FORT, we achieve state-insensitive single-atom trapp...; 关键词：Trapping and Cooling of Single Atoms in an Optical Microcavity by a Magic-Wavelength Dipole Trap QED

Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping: 《Chinese Physics Letters》2015年第2期148-151,共4页李士颜周旭亮孔祥挺李梦珂米俊萍边静王伟潘教青; Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708; A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit...; 关键词：Selective Area Growth of GaAs in V-Grooved Trenches on Si Substrates by Aspect-Ratio Trapping

Charge Loss Characteristics of Different Al Contents in a HfA10 Trapping Layer Investigated by Variable Temperature Kelvin Probe Force Microscopy: 《Chinese Physics Letters》2014年第6期207-210,共4页张冬霍宗亮靳磊韩宇龙褚玉琼陈国星刘明杨保和; Supported by the National Basic Research Program of China under Grant Nos 2010CB934200 and 2011CBA00600, the National Natural Science Foundation of China under Grant Nos 61176073 and 60825403, and the Director＇s Fund of Institutes of Microelectronics of Chinese Academy of Sciences.; Kelvin probe force microscopy （KFM） technology is applied to investigate the charge storage and loss characteristics of the HfAlO charge trapping layer with various AI contents. The experimental results demonstrate ...

The Distinguished Charge-Trapping Capability of the Memory Device with Al2O3-Cu2O Composite as the Charge Storage Layer: 《Chinese Physics Letters》2014年第2期146-148,共3页陆建新欧欣蓝学新曹正义刘晓杰卢伟龚昌杰徐波李爱东夏奕东殷江刘治国; Supported by the National Natural Science Foundation of China under Grand Nos 61176124 and 11204123, and the National Basic Research Program of China under Grant No 2010CB934201.; A memory device Si/Al2O3/Al2O3-Cu2O/Al2O3/Pt is fabricated by using atomic layer deposition and r^magnetron sputtering techniques. The memory device including the composite of Al2O3 and Cu2O as the charge storage laye...

Trapping Behavior of He in Ti Revisited by ab initio Calculations: 《Chinese Physics Letters》2014年第1期148-151,共4页万初斌周晓松李世娜张会军梁建华彭述明巨新; Supported by the National Natural Science Foundation of China （No 11087011）, the China Post-Doctoral Science Foundation （No 2011M500223）, and the Fundamental Research Funds for the Central Universities （FRF-TP-12-112A）.; We report a detailed ab initio study of the trapping behavior of interstitial helium atoms （IHAs） in hcp Ti. The tetrahedral interstitial site for one He is confirmed to be the most stable IHA configuration, but the...

Impact of Au Nanocrystal Size and Inter-Nanocrystal Distance on the Storage Characteristics of Memory Devices被引量：1: 《Chinese Physics Letters》2013年第12期161-164,共4页LAN Xue-Xin OU Xin XU Bo GONG Chang-Jie LI Run YIN Qiao-Nan XIA Yi-Dong YIN Jiang LIU Zhi-Guo LI Ai-Dong YAN Feng; Supported by the National Natural Science Foundation of China under Grant No 61176124;the National Basic Research Program of China under Grant No 2010CB934201;the Priority Academic Program Development of Jiangsu Higher Education Institutions.; The charge-storage characteristics of charge trapping memory devices containing different sizes of Au nanocrystals(NCs)sandwiched by Al2O3 tunneling and blocking layers are studied.A strong impact of both Au NC size a...; 关键词：TRAPPING size CHARGE

The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 µm Partially-Depleted Silicon-on-Insulator Technology被引量：1: 《Chinese Physics Letters》2013年第8期30-33,共4页HUANG Hui-Xiang BI Da-Wei PENG Chao ZHANG Yan-Wei ZHANG Zheng-Xuan; An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2μm partially-depleted silicon-on-insulator(SOI)technology.The previous radiation-induced narrow channel effect manifests itself wi...; 关键词：TRENCH NARROW TRAPPING

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