supported by the National Natural Science Foundation of China(Grant Nos.52172136,12088101,11991060,and U2230402)。
Materials for deep-ultraviolet(DUV)light emission are extremely rare,significantly limiting the development of efficient DUV light-emitting diodes.Here we report CsMg(I_(1−x)Br_(x))_(3) alloys as potential DUV light e...
supported by the National Natural Science Foundation of China(Grant Nos.62174113,12174275,and 61874139);the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2019B1515120057,2023A1515140094,and 2023A1515110730)。
In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona dischar...
the National Key Research and Development Program of China(Grant No.2019YFA0307703);the National Natural Science Foundation of China(Grant Nos.11974426 and 12234020)。
We demonstrate the extreme ultraviolet free induction decay emission that can be significantly enhanced by employing isolated attosecond pulses.The near infrared pulses are applied to excite the neon atoms into Rydber...
supported by the National Key R&D Program of China (Grant No. 2019YFA0307703);the National Natural Science Foundation of China (Grant Nos. 12234020, 12274461, and 11904400);the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91850201)。
Using one-dimensional semiconductor Bloch equations,we investigate the multiband dynamics of electrons in a cutoff extension scheme employing an infrared pulse with additional UV injection.An extended three-step model...
supported by the National Key Research and Development Program of China(Grant Nos.2017YFA0303700 and 2018YFA0306301);the National Natural Science Foundation of China(Grant Nos.11734011,12004245,and 62105154);the Foundation for Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01-ZX06);the Shandong Quancheng Scholarship(Grant No.00242019024);the China Postdoctoral Science Foundation(Grant No.2021M691601);the Natural Science Foundation of Jiangsu Province(Grant No.BK20210324)。
Perfect vector beams are a class of special vector beams with invariant radius and intensity profiles under changing topological charges.However,with the limitation of current devices,the generation of these vector be...
Supported by the National Natural Science Foundation of China(Grant Nos.11804307,U1804155,and U1604263);the China Postdoctoral Science Foundation(Grant Nos.2018M630830 and 2019T120631).
Searching for new carbon allotropes with superior properties has been a longstanding interest in material sciences and condensed matter physics.Here we identify a novel superhard carbon phase with an 18-atom trigonal ...
Supported by the National Key Research and Development Program of China(Grant Nos.2019YFA0307700 and 2016YFA0401100);the National Natural Science Foundation of China(Grant Nos.11774215,11674209,91950101,11947243,11334009,11425414,and11947080);Sino-German Mobility Programme(Grant No.M-0031);Department of Education of Guangdong Province(Grant No.2018KCXTD011);High Level University Projects of the Guangdong Province(Mathematics,Shantou University);the Open Fund of the State Key Laboratory of High Field Laser Physics(SIOM)。
Steering ultrafast electron dynamics with well-controlled laser fields is very important for generation of intense supercontinuum radiation.It can be achieved through coherent control of the symmetry of the interactio...
Supported by the National Key R&D Program of China under Grant No.2016YFB0400902;the National Natural Science Foundation of China under Grant No.61921005;the Natural Science Foundation of Jiangsu Province under Grant No.BK20190302。
We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a...
Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400901 and2016YFB0400804;the Key Laboratory of Infrared Imaging Materials and Detectors of Shanghai Institute of Technical Physics of Chinese Academy of Sciences under Grant NoⅡMDKFJJ-15-07;the National Natural Science Foundation of China under Grant Nos 61675079,11574166 and 61377034;the China Postdoctoral Foundation under Grant No 2016M602287
High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet (UV) light-emitting diodes. The Al-only metal layer could form the Ohmic contact ...
Supported by the National Natural Science Foundation of China under Grant Nos 11274289,11325419,11474267,11404319,61327901,61225025 and 1147426;the Fundamental Research Funds for the Central Universities under Grant Nos WK2470000018 and WK2030020019;the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01030300;the National Youth Top Talent Support Program of National High-level Personnel of Special Support Program under Grant No BB2470000005;the Anhui Provincial Natural Science Foundation under Grant No 1608085QA22
We demonstrate a fiber Fabry-Pérot cavity in the ultraviolet range, which covers the florescence wavelength for the 2P to 2S transition of Yb and is designed in the bad cavity limit for floresce...