supported by the National Natural Science Foundation of China(NSFC)(No.52372131).
The surge in data volume and algorithmic complexity necessitates the development of highly integrated,low-power,and high-performance electronic components.Conventional complementary metal-oxide-semiconductor(CMOS)inve...
supported by National Key Research and Development Program of China(2023YFA1406900);Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDB0580000,XDB43010200,GJ0090406);National Natural Science Foundation of China(62222514,62350073,U2341226,61991440,12227901);Shanghai Science and Technology Committee(23ZR1482000,22JC1402900);Natural Science Foundation of Zhejiang Province(LR22F050004);Shanghai Municipal Science and Technology Major Project(2019SHZDZX01);Youth Innovation Promotion Association(Y2021070);International Partnership Program(112GJHZ2022002FN)of Chinese Academy of Sciences;Shanghai Human Resources and Social Security Bureau(2022670);China Postdoctoral Science Foundation(2023T160661,2022TQ0353and 2022M713261).
In the domain of spectroscopy,miniaturization efforts often face significant challenges,particularly in achieving high spectral resolution and precise construction.Here,we introduce a computational spectrometer powere...
supported by the National Natural Sci-ence Foundation of China(No.22174135,No.21790352);the National Key R&D Program of China(No.2021YFA1500500,No.2016YFA0200600);the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB36000000);Anhui Initiative in Quantum Information Technologies(No.AHY090100);CAS Project for Young Scientists in Basic Research(No.YSBR-054);Innovation Program for Quantum Science and Technology(No.2021ZD0303301);the Fundamental Research Funds for the Central Universities.
Double-resonance Raman(DRR)scattering in two-di-mensional(2D)materials describes the intravalley or intervalley scattering of an electron or a hole excited by incident photons.Although the presence of defects can prov...
supported by the National Natural Science Foundation of China(No.22201098);the Natural Science Foundation of Shandong Province(Nos.ZR2021QB005 and ZR2021MB008);Jinan City“New University 20”Project(No.202228113).
Constructing a valid heterointerface with a built-in electric field is an effective strategy for designing energy storage anodes with exceptional efficiency for potassium-ion batteries(PIBs)and sodium-ion batteries(SI...
Deutsche Forschungsgemeinschaft(Schn1376/14-1,Re2974/26-1,Gi1121/4-1,INST184/220-1 FUGG);European Union’s Horizon 2020(101017733);NFSC(12304012)。
Optical resonators are a powerful platform to control the spontaneous emission dynamics of excitons in solidstate nanostructures.We study a MoSe_(2)-WSe_(2)heterostructure that is integrated in a cryogenic open optica...
supported by the National Natural Science Foun-dation of China(Grant Nos.62174122 and U2241244);the Fun-damental Research Funds for the Central Universities(Grant No.2042023kf0116);the Science and Technology Project of China Southern Power Grid Co.,Ltd.(Grant No.GXKJXM20220095);the Hubei Key Laboratory of Electronic Manufacturing and Pack-aging Integration of Wuhan University(Grant No.EMPI2023016)。
Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor(TFET).In this work,the device performance of WSe_(2)/SnSe_(...
National Natural Science Foundation of China(11974122,U22A2073);Science and Technology Planning Project of Guangdong Province(2022A0505050067);Open Research Project Programme of the Macao Centre for Research and Development in Advanced Materials(University of Macao)(MCRDAM-IAPME(UM)-2022-2024/ORP/XXX/2023);Scientific Research Innovation Project of Graduate School of South China Normal University.
Realization of positive and negative optical responses in a single device promises construction of multifunctional optoelectronic devices.This work demonstrates a Ga_(2)O_(3)∕WSe_(2) mixed-dimensional heterojunction ...
financially supported by the National Natural Science Foundation of China(No.12174444);M.Zhu acknowledges the fruitful discussion with Dr.Jinbao Jiang at National University of Defense Technology.
High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconducto...
financially supported by the National Natural Science Foundation of China (No.52106259);the Fundamental Research Funds for the Central Universities (2024MS013);Key Research and Development Program of Shaanxi (Program No.2022LL-JB-08)。
Green hydrogen is urgently required for sustainable development of human beings and rational construction of heterostructures holds great promising for photocatalytic hydrogen generation.Herein,2D/2D WSe_(2)/ZnIn_(2)S...