BJT

作品数：163被引量：158H指数：6
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Non-ideal effect in 4H-SiC bipolar junction transistor with double Gaussian-doped base
《Chinese Physics B》2015年第6期651-655,共5页元磊 张玉明 宋庆文 汤晓燕 张义门 
Project supported by the National Natural Science Foundation of China(Grant Nos.60876061 and 61234006);the Natural Science Foundation of Shaanxi Province,China(Grant No.2013JQ8012);the Doctoral Fund of the Ministry of Education of China(Grant Nos.20130203120017 and 20110203110010)
The non-ideal effect of 4H-SiC bipolar junction transistor （BJT） with a double Gaussian-doped base is characterized and simulated in this paper. By adding a specific interface model between SiC and SiO2, the simulat...
关键词：4H-SiC BJT double base early voltage emitter current crowding 
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
《Chinese Physics B》2013年第9期559-563,共5页邓永辉 谢刚 汪涛 盛况 
supported by the Ministry of Education of China (Grant No. 20100101110056);the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468)
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor （LBJT） with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the ...
关键词：4H-SIC lateral bipolar junction transistor （BJT） high current gain high breakdown voltage 
A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base
《Chinese Physics B》2009年第9期3995-3999,共5页张有润 张波 李肇基 邓小川 刘曦麟 
In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conve...
关键词：4H-SIC bipolar junction transistor （BJT） buried layer current gain 
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