supported by the National Natural Science Foundation of China(Grant Nos.62090014,62188102,62104184,62104178,and 62104179);the Fundamental Research Funds for the Central Universities of China(Grant Nos.XJS201102,XJS211101,XJS211106,and ZDRC2002)。
An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HE...
This paper proposed the high-frequency, multi-harmonic-controlled, Class-F power amplifier (PA) implemented with 0.5 μm GaN Hetrojunction Electron Mobility Transistor (HEMT). For PA design at high frequencies, parasi...