DOPING

作品数:1633被引量:2675H指数:15
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相关作者:李酽张莉李平邓胜华李义宝更多>>
相关机构:中国科学院中国科学技术大学东北师范大学重庆大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>
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Preparation, Characterization and Photocatalytic Activity of Lanthanum Doped Mesoporous Titanium Dioxide被引量:1
《Chinese Journal of Chemical Physics》2012年第1期96-102,I0004,共8页石中亮 赖虹 姚淑华 王少峰 
Lanthanum doped mesoporous titanium dioxide photocatalysts with different La content were synthesized by template method using tetrabutyltitanate (Ti(OC4H9)4) as precursor and Pluronic P123 as template. The cataly...
关键词:Mesoporous titanium dioxide Lanthanum-doping Photocatalytic activity Phenol 
Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys
《Journal of Semiconductors》2006年第3期397-402,共6页谭平恒 罗向东 葛惟昆 徐仲英 Zhang Y Mascarenhas A Xin H P Tu C W 
国家自然科学基金(批准号:10404029,10334040,10274081) ;国家重点基础研究专项基金(批准号:G001CB3095);江苏省自然科学基金(批准号:BK2004403) ;香港RGC基金(批准号:HKUST6076/02P);美国ODE基金(批准号:DE-AC36-99GO10337)资助项目~~
The transitions of E0 ,E0 +A0, and E+ in dilute GaAs(1-x) Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are ...
关键词:GAASN resonant Raman scattering PHOTOLUMINESCENCE bandgap isoelectronic doping 
High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures
《Journal of Semiconductors》2005年第9期1692-1698,共7页王晓峰 曾一平 王保强 朱占平 杜晓晴 李敏 常本康 
The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and th...
关键词:integrated photosensitivity muhilayer structure NEA photocathode diffusion length surface escape probability 
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