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DOPING: 作品数：1633被引量：2675H指数：15; 导出分析报告; 相关领域：理学更多>>; 相关作者：李酽张莉李平邓胜华李义宝更多>>; 相关机构：中国科学院中国科学技术大学东北师范大学重庆大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Transparent conductive SnO_(2)thin films via resonant Ta doping: 《Science China Materials》2023年第1期264-271,共8页Vedaste Uwihoreye Zhenni Yang Jia-Ye Zhang Yu-Mei Lin Xuan Liang Lu Yang Kelvin H.L.Zhang; supported by the National Natural Science Foundation of China(21872116 and 22075232)。; Transparent conductive oxide(TCO)thin films are highly desired as electrodes for modern flat-panel displays and solar cells.Alternative indium-free TCO materials are highly needed,because of the scarcity and the high ...; 关键词：transparent conductive oxide sol-gel spin coating Ta-doped SnO_(2) electronic structure

Research on the properties of ZnO_(1-x)S_(x) thin films modified by sulfur doping for CIGS solar cells: 《Optoelectronics Letters》2022年第11期678-682,共5页SUN Hang XUE Yuming WANG Luoxin GUO Qing LI Penghai; supported by the Natural Science Foundation of Tianjin (No.18JCYBJC95400)。; ZnO_(1-x)S_(x) thin films modified by sulfur doping were prepared on glass substrates by chemical bath deposition(CBD) for studying the effect of thiourea concentration on the thin film properties. The obtained ZnO_(1...; 关键词：properties DOPING THIOUREA

Synthesis and thermoelectric properties of Bi-doped SnSe thin films: 《Chinese Physics B》2021年第11期475-480,共6页Jun Pang Xi Zhang Limeng Shen Jiayin Xu Ya Nie Gang Xiang; Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0405702);the National Natural Science Foundation of China(Grant No.51672179).; Bi doped n-type SnSe thin films were prepared by chemical vapor deposition(CVD)and their structure and thermoelectric properties were studied.The x-ray diffraction patterns,x-ray photoelectron spectroscopy,and microsc...; 关键词：SnSe thin films Bi doping thermoelectric properties Seebeck coefficient

Influence of Cadmium Doping on Structural, Optical, electrical and Photocatalytic Properties of TiOz Thin Films Prepared by Spray Pyrolysis Technique: 《Journal of Physical Science and Application》2016年第1期157-166,共10页Selma M. H. AI-Jawad; Undoped and doped cadmuim titanium oxide thin films at different percentage （1, 3, 4, and 5）% were fabricated by spray pyrolysis by using a solution of titanium tetrachloride and ethyl alcohol. The films have been d...; 关键词：TiO2 spray pyrolysis cadmium dopent structural properties optical properties and photocatalytic properties.

Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputtering被引量：1: 《International Journal of Minerals,Metallurgy and Materials》2015年第10期1108-1114,共7页Liang-xian Chen Sheng Liu Cheng-ming Li Yi-chao Wang Jin-long Liu Jun-jun Wei; financially supported by the National Natural Science Foundation of China(No.51272024);the China Postdoctoral Science Foundation(No.2014M560042); Radio frequency(RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide(Zn O) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each ...; 关键词：zinc oxide thin films DOPING DEPOSITION MAGNETRON

Influence of Ag and Sn incorporation in In_2S_3 thin films被引量：1: 《Chinese Physics B》2015年第7期539-543,共5页林灵燕俞金玲程树英陆培民; Project supported by the National Natural Science Foundation of China(Grant Nos.61076063,61340051,and 61306120);the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073); Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, str...; 关键词：In2S3 thin films DOPING thermal evaporation

Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy: 《Chinese Physics Letters》2015年第5期124-128,共5页李明颖刘正太杨海峰赵家琳姚岐樊聪聪刘吉山高波沈大伟谢晓明; Supported by the National Basic Research Program of China(973 Program)under Grant Nos 2011CBA00106 and2012CB927400;the National Natural Science Foundation of China under Grant Nos 11274332 and 11227902;Helmholtz Association through the Virtual Institute for Topological Insulators(VITI).M.Y.Li and D.W.Shen are also supported by the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB04040300; By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped （Sr1-xLax）2IrO4 （001）（x=0, 0.05, 0.1 and 0.15） single crystalline thin films and then investigate the d...; 关键词：Sr Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy RHEED La ARPES

Characteristic evaluation on spray-deposited WFTO thin films as a function of W doping ratio被引量：1: 《Rare Metals》2014年第4期433-441,共9页G.Turgut E.F.Keskenler S.Aydin D.Tatar E.Sonmez S.Dogan B.Duzgun; Abstract In this work, F and F ＋ W simultaneously doped SnO2 highly transparent conducting thin films were depos- ited on glass substrates at （500 4± 5） ℃ temperature by the spray pyrolysis method. Microstructura...; 关键词：WFTO FrO Spray pyrolysis Thin films LATTICES

Effect of Tb Doping on Structural and Electrical Properties of BiFeO_3 Thin Films Prepared by Sol-Gel Technique被引量：2: 《Journal of Materials Science & Technology》2014年第4期365-370,共6页Guohua Dong Guoqiang Tan Wenlong Liu Ao Xia Huijun Ren; supported by the Project of the National Natural Science Foundation of China(Grant No.51172135);the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002092);Research and Special Projects of the Education Department of Shaanxi Province(Grant No.12JK0445);the Graduate Innovation Fund of Shaanxi University of Science and Technology(SUST-A04); Bil_xTbxFe03 thin films were prepared on Sn02 （fluorine doped tin oxide） substrates by a sol-gel method. The structural and electrical properties of the BiFe03 thin films were characterized and tested. The results i...; 关键词：BiFeO3 thin films Tb doping Sol-gel method Ferroelectric properties

Room Temperature Ferromagnetism in Ga1-xHoxN （x=0.0 and 0.05） Diluted Magnetic Semiconductor Thin Films: 《Chinese Journal of Chemical Physics》2012年第3期313-317,373,374,共7页Ghulam Murtaza Rai Muhammad Azhar Iqbal Yong-bing Xu lain Gordon Will Qasim Mahmood; Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely ...; 关键词：Diluted magnetic semiconductor Holmium doping X-ray diffraction Scan-ning electron microscopy Room temperature ferromagnetism

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