GESI

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Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6
《Semiconductor Photonics and Technology》2000年第3期134-138,共5页CHENGBu－wen LIDai－zong 等 
ChineseHigh -TechnologyResearchPlan (No .863- 30 7- 15- 4 ( 0 3) )andChineseNaturalScienceFund (No .698962 60 )
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is introduced. SiGe alloys and SiGe/Si multiple quantum wells (MQWs) have been grown by cold-wall UHV/CVD using disilane (Si 2H 6) and germane (GeH 4) as ...
关键词：GESI Quantum well UHV/CV 
Comparison of Ge_xSi_(1- x) Grown by UHV/CVD from Si_2H_6/GeH_4 and SiH_4/GeH_4被引量：1
《Semiconductor Photonics and Technology》1999年第3期134-138,共5页LI Dai-zong, YU Zhuo, CHEN Bu-wen, HUANG Chang-jun, LEI Zhen-lin, YU Jin-zhong, WANG Qi-ming (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,CHN) 
The National Natural Science Foundation of China
Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-fa...
关键词：Semiconductor Materials GESI UHV/CVD  CLC number:TN304.054  Document code:A 
Calculation of Ge_(0.5)Si_(0.5)—Si Superlattice Photodetectors on Ge_(0.05)Si_(0.95) Waveguides:The Optimum Parameters
《Semiconductor Photonics and Technology》1997年第1期3-6,共4页XU Xuelin, LI Na, LIU Enke(Xi’an Jiaotong University, Xi’an 710049, CHN ) 
Abstract: The optimum parameters are calculated by the large cross - section theory and mode cut - off equation. The effect on reverse bias voltage is analysed by the doping concentration in n+ - Si. This is significa...
关键词：Characteristics GeSi Material PHOTODETECTORS WAVEGUIDES 
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