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I-V: 作品数：544被引量：1029H指数：13; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：李昭东孙新军雍岐龙胡晓君王新洪更多>>; 相关机构：中国科学院哈尔滨工业大学西安交通大学上海大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家重点实验室开放基金国家高技术研究发展计划更多>>

Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode: 《Chinese Physics B》2022年第5期652-656,共5页Qiliang Wang Tingting Wang Taofei Pu Shaoheng Cheng Xiaobo Li Liuan Li Jinping Ao; Project supported by the Key-Area Research and Development Program of Guangdong Province,China(Grant No.2020B0101690001);the Natural Science Foundation of Sichuan Province,China(Grant No.22YYJC0596)。; A quasi-vertical Ga N Schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown voltage.By inserting a Si N dielectric between the anode metal with a relatively ...; 关键词：Schottky barrier diode hybrid anode dielectric edge termination

Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature被引量：1: 《Chinese Physics B》2021年第5期661-666,共6页Yu Fu Rui-Min Xu Xin-Xin Yu Jian-Jun Zhou Yue-Chan Kong Tang-Sheng Chen Bo Yan Yan-Rong Li Zheng-Qiang Ma Yue-Hang Xu; the National Natural Science Foundation of China(Grant No.61922021);the National Key Research and Development Project,China(Grant No.2018YFE0115500);the Fund from the Sichuan Provincial Engineering Research Center for Broadband Microwave Circuit High Density Integration,China.; The interface state of hydrogen-terminated(C-H)diamond metal-oxide-semiconductor field-effect transistor(MOSFET)is critical for device performance.In this paper,we investigate the fixed charges and interface trap stat...; 关键词：diamond MOSFET ALD temperature pulsed I-V interface trap conductance method

Furi-Martelli-Vignoli spectrum and Feng spectrum of nonlinear block operator matrices被引量：1: 《Chinese Physics B》2021年第4期130-138,共9页Xiao-Mei Dong De-Yu Wu Alatancang Chen; Project supported by the National Natural Science Foundation of China(Grant Nos.11561048 and 11761029);the Natural Science Foundation of Inner Mongolia,China(Grant Nos.2019MS01019 and 2020ZD01)。; We investigate the Furi-Martelli-Vignoli spectrum and the Feng spectrum of continuous nonlinear block operator matrices,and mainly describe the relationship between the Furi-Martelli-Vignoli spectrum(compared to the F...; 关键词：nonlinear operator SPECTRUM block operator matrix

Micron-sized diamond particles containing Ge-V and Si-V color centers被引量：2: 《Chinese Physics B》2019年第7期354-360,共7页Hang-Cheng Zhang Cheng-Ke Chen Ying-Shuang Mei Xiao Li Mei-Yan Jiang Xiao-Jun Hu; Project supported by the National Natural Science Foundation of China(Grant Nos.50972129 and 50602039);the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LQ15A040004 and LY18E020013);the International Science Technology Cooperation Program of China(Grant No.2014DFR51160);the National Key Research and Development Program of China(Grant No.2016YFE0133200);European Union’s Horizon 2020 Research and Innovation Staff Exchange(RISE)Scheme(Grant No.734578);One Belt and One Road International Cooperation Project from Key Research and Development Program of Zhejiang Province,China(Grant No.2018C04021);the Key Project of the National Natural Science Foundation of China(Grant No.U1809210); Micron-sized diamond particles containing germanium-vacancy(Ge-V) color centers with a zero-photon line(ZPL)around 602.3 nm are successfully grown using hot filament chemical vapor deposition.The crystal morphology ch...; 关键词：DIAMOND germanium-vacancy silicon-vacancy PHOTOLUMINESCENCE

Analysis of the third harmonic for class-F power amplifiers with an Ⅰ–Ⅴ knee effect: 《Chinese Physics B》2015年第5期592-596,共5页赵博超卢阳魏家行董梁王毅曹梦逸马晓华郝跃; The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...; 关键词：class-F power amplifier third harmonic I-V knee effect Loadpull technique

Comparative study of the electrical properties of Au/n-Si(MS) and Au/Si_3N_4 /n-Si(MIS) Schottky diodes: 《Chinese Physics B》2013年第6期627-632,共6页Adem Tataroglu; supported by Gazi University Scientific Research Project (BAP),FEF. 05/2012-15; In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temp...; 关键词：Au/n-Si and Au/Si3N4/n-Si type diodes I-V and C-V measurements ideality factor barrier height

Investigation of the inhomogeneous barrier height of an Au/Bi_4Ti_3O_(12)/n-Si structure through Gaussian distribution of barrier height: 《Chinese Physics B》2012年第12期538-543,共6页M.Gken M.Yildirim; Project supported by the Diizce University Scientific Research Project(Grant Nos.2010.05.02.056 and 2012.05.02.110); A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current voltage （IV） characteristics in a temperature range of 300 K-400 K. Obtained I-V data are evaluated by the thermionic emission （TE） t...; 关键词：BI4TI3O12 I-V characterization temperature dependence Gaussian distribution

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height: 《Chinese Physics B》2010年第9期548-558,共11页茹国平俞融蒋玉龙阮刚; supported by Shanghai-Applied Materials Research and Development Fund (Grant Nos.07SA06 and 09700714200);Fok Ying Tong Education Foundation (Grant No.114006); This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model...; 关键词：Schottky diode barrier height inhomogeneity I-V-T thermal activation

Effect of multi-velocity-difference in traffic flow被引量：1: 《Chinese Physics B》2008年第12期4446-4450,共5页莫业柳何红弟薛郁时伟卢伟真; Project supported by the National Basic Research Program of China (Grant No 2006CB705500);the National Natural Science Foundation of China (Grant Nos 10662002 and 10532060);the Special Foundation for the New Century Talents Program of Guangxi Zhuang Autonomous Region, China (Grant No 2005205);the Research Grants from City University of Hong Kong (Grant No SRG7002226(BC)); Based on the optimal velocity models, an extended model is proposed, in which multi-veloclty-dllterence aheacl is taken into consideration. The damping effect of the multi-velocity-difference ahead has been investigat...; 关键词：traffic flow optimal velocity model stable condition linear stability analysis

I-V-T studies on Ni-silicide／n-Si（100） contacts formed by Ti-Ni-Si solid state reaction: 《Chinese Physics B》2005年第8期1639-1643,共5页竺士炀茹国平周嘉黄宜平

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