IGZO

作品数:105被引量:111H指数:5
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相关领域:电子电信更多>>
相关作者:张建华李喜峰陈龙龙喻志农高晓红更多>>
相关机构:山东大学深圳市华星光电技术有限公司东南大学深圳市华星光电半导体显示技术有限公司更多>>
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相关基金:国家自然科学基金山东大学自主创新基金中国博士后科学基金国家重点基础研究发展计划更多>>
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A monolithic 3D IGZO-RRAM-SRAM-integrated architecture for robust and efficient compute-in-memory enabling equivalent-ideal device metrics
《Science China(Information Sciences)》2025年第2期318-333,共16页Shengzhe YAN Zhaori CONG Zi WANG Zhuoyu DAI Zeyu GUO Zhihang QIAN Xufan LI Xu ZHENG Chuanke CHEN Nianduan LU Chunmeng DOU Guanhua YANG Xiaoxin XU Di GENG Jinshan YUE Lingfei WANG Ling LI Ming LIU 
supported in part by National Key R&D Program of China(Grant No.2022YFB3606902);National Natural Science Foundation of China(Grant Nos.62204256,92264204,62274178,62488201);Beijing Nova Program(Grant No.Z211100002121125);China Postdoctoral Science Foundation(Grant Nos.BX20220330,2021M703444);Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB44000000)。
Compute-in-memory(CIM)based on various devices such as static random access memory(SRAM)and resistive random access memory(RRAM)and other emerging devices such as indium-gallium-zinc-oxide(IGZO)transistor,magnetoresis...
关键词:compute-in-memory(CIM) monolithic 3D RRAM IGZO 3D-stack simulation 
Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing
《Science China(Information Sciences)》2024年第12期277-286,共10页Li ZHU Sixian LI Junchen LIN Yuanfeng ZHAO Xiang WAN Huabin SUN Shancheng YAN Yong XU Zhihao YU Chee Leong TAN Gang HE 
financially supported by National Natural Science Foundation of China (Grant Nos.52105369,61974070);Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No.23KJB510014);Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant No.NY222061);Scientific Research Project of Colleges and Universities in Anhui Province (Grant No.2022AH050113);University Synergy Innovation Program of Anhui Province (Grant No.GXXT-2022-012)。
Inspired by biological visual systems, optoelectronic synapses with image perception, memory retention, and preprocessing capabilities offer a promising pathway for developing high-performance artificial perceptual vi...
关键词:IGZO optoelectronic synaptic devices persistent photoconductivity ultra-low power neuromorphic computing 
Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications被引量:1
《Science China(Information Sciences)》2023年第10期57-79,共23页Shengzhe YAN Zhaori CONG Nianduan LU Jinshan YUE Qing LUO 
supported in part by National Key R&D Program(Grant No.2018YFA0208503);National Natural Science Foundation of China(Grant Nos.92264204,61890944);China Postdoctoral Science Foundation(Grant No.2021M703444)。
In the past several decades,the density and performance of transistors in a single chip have been increasing based on Moore's Law.However,the slowdown of feature size reduction and memory wall in the von Neumann archi...
关键词:IGZO FET 2T0C DRAM high density compact modeling computing-in-memory monolithic 3D integration 
IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics被引量:2
《Science China(Information Sciences)》2022年第6期214-221,共8页Ying ZHU Yongli HE Chunsheng CHEN Li ZHU Changjin WAN Qing WAN 
supported by National Key R&D Program of China(Grant No.2019YFB2205400)。
Temperature is one of the vital influential factors for all physiological and mental activities.Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic compu...
关键词:neuromorphic transistors IGZO TFTs temperature-dependent synaptic plasticity logic transformation 
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