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ISLANDS: 作品数：320被引量：381H指数：8; 导出分析报告; 相关领域：天文地球更多>>; 相关作者：石瑞香刘闯王志斌王珊珊朱少凡更多>>; 相关机构：中国科学院广州军区军事医学研究所复旦大学物理科学与技术学院更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家高技术研究发展计划更多>>

Bimodal growth of Fe islands on graphene: 《Chinese Physics B》2024年第6期553-557,共5页顾翊晟俞俏滟刘荡孙蓟策席瑞骏陈星森薛莎莎章毅杜宪宁旭辉杨浩管丹丹刘晓雪刘亮李耀义王世勇刘灿华郑浩贾金锋; the Ministry of Science and Technology of China (Grant Nos. 2019YFA0308600 and 2020YFA0309000);the National Natural Science Foundation of China (Grant Nos. 92365302, 92065201, 22325203, 92265105, 12074247, and 12174252);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000);the Science and Technology Commission of Shanghai Municipality (Grant Nos. 2019SHZDZX01, 19JC1412701 and 20QA1405100) for financial support;financial support from the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302500)。; Magnetic metals deposited on graphene hold the key to applications in spintronics. Here, we present the results of Fe islands grown on graphene/Si C(0001) by molecular beam epitaxy, which are investigated by scanning ...; 关键词：GRAPHENE MAGNETISM molecular beam epitaxy scanning tunneling microscopy

Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications: 《Chinese Physics B》2022年第5期738-742,共5页Wen-Lu Yang Lin-An Yang Fei-Xiang Shen Hao Zou Yang Li Xiao-Hua Ma Yue Hao; Project supported by the National Natural Science Foundation of China(Grant Nos.61974108 and 61674117);the National Natural Science Foundation for Young Scholars of China(Grants No.61804119);the Postdoctoral Science Foundation of China(Grants No.2018M643576)。; A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is proposed.The introduction of a p-GaN island redistributes the electric field in the gate–drain cha...; 关键词：p-GaN island high electron mobility transistor(HEMT) ALGAN/GAN electron domain

Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene: 《Chinese Physics B》2022年第3期517-520,共4页Jing-Peng Song Ang Li; Project supported by the Science Foundation of the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18ZR1447300)。; Introducing metal thin films on two-dimensional(2D) material may present a system to possess exotic properties due to reduced dimensionality and interfacial effects. We deposit Pb islands on single-crystalline graphen...; 关键词：scanning tunneling microscopy GRAPHENE quantum well states superconducting proximity effect

Microstructure evolution of Cu atomic islands on liquid surfaces in the ambient atmosphere: 《Chinese Physics B》2015年第7期350-355,共6页张晓飞陈杭余森江; Project supported by the National Natural Science Foundation of China(Grant Nos.11204283 and 11304298);the Natural Science Foundation of Zhejiang Province,China(Grant No.LQ13A040002);the Scientific Research Project Funds of Talent Introduction of China Jiliang University(Grant No.01101-000406); We report the microstructure evolution of copper（Cu） nm-sized atomic islands on silicone oil surfaces in the ambient atmosphere. The origin of these nearly free sustaining atomic islands is explained by a three-stag...; 关键词：liquid substrates atomic islands microstructure evolution

Kinetic Monte Carlo simulations of three-dimensional self-assembled quantum dot islands被引量：1: 《Chinese Physics B》2014年第1期330-335,共6页宋鑫冯昊刘玉敏俞重远尹昊智; Project supported by the National Natural Science Foundation of China(Grant Nos.60908028,60971068,and 10979065);the Fundamental Research Funds for the Central Universities,China(Grant No.2011RC0402);the Program for New Century Excellent Talents in University,China(Grant No.NCET-10-0261); By three-dimensional kinetic Monte Carlo simulations, the effects of the temperature, the flux rate, the total coverage and the interruption time on the distribution and the number of self-assembled InAs/GaAs （001） ...; 关键词：Monte Carlo simulations self-assembled quantum dot islands growth parameters

Ripening of single-layer InGaAs islands on GaAs(001): 《Chinese Physics B》2013年第2期381-384,共4页刘珂周清周勋郭祥罗子江王继红胡明哲丁召; Project supported by the National Natural Science Foundation of China (Grant Nos. 60866001 and 61076049);the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. (2007) 03);the Foundation of Guizhou Provincial Science and Technology Department (Grant No. QKH-J[2007]2176);the Special Assistant to the High-Level Personnel Research Projects of Guizhou Provincial Committee,Organization Department(Grant No. TZJF-200610);the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003);the Science and Technology Projects for Overseas Researchers of Guizhou Province (Grant No. Z103233);Special Governor Fund for Outstanding Professionals in Science & Technology and Education of Guizhou Province (Grant No. 2009114);the Innovation Funds for Graduates of Guizhou University (Grant No. LG2012019); The present paper discusses our investigation of InGaAs surface morphology annealed for different lengths of time.After annealing for 15 min,the ripening of InGaAs islands is completed.The real space scanning tunnelin...; 关键词：scanning tunneling microscopy morphology of films ANNEALING diffusion in nanoscale solids

The influence of annealing temperature on the morphology of graphene islands: 《Chinese Physics B》2012年第8期532-536,共5页黄立徐文焱阙炎德潘毅高敏潘理达郭海明王业亮杜世萱高鸿钧; Project supported by the National Basic Research Program of China (Grant Nos. 2011CB932700,2010CB923004,2010CB923004,and 2009CB929103);the National Natural Science Foundation of China (Grant Nos. 10834011 and 60976089);the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W22); We report on temperature-programmed growth of graphene islands on Ru （0001） at annealing temperatures of 700 ℃, 800 ℃, and 900 ℃. The sizes of the islands each show a nonlinear increase with the annealing tempera...; 关键词：graphene islands Ru （0001） annealing temperature scanning tunneling microscope

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands被引量：1: 《Chinese Physics B》2011年第12期450-455,460+459,共6页任敏李泽宏刘小龙谢加雄邓光敏张波; Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005);the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010J038); A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in th...; 关键词：inhomogeneous floating islands specific on-state resistance breakdown voltage body diode reverse recovery

Morphology and microstructure of Ag islands of aggregated atoms on oil surfaces: 《Chinese Physics B》2011年第6期349-355,共7页张初航吕能张晓飞 Saida Ajeeb 夏阿根叶高翔; Project supported by the National Natural Science Foundation of China (Grant Nos. 11074215 and 50701037);the Fundamental Research Funds for the Central Universities (Grant No. 2010QNA3025); The morphology evolution of silver islands on silicone oil surfaces is measured and the microstructure of the islands is studied. The deposited Ag atoms diffuse and aggregate on the oil surface and then Ag islands wit...; 关键词：liquid substrate ISLAND MICROSTRUCTURE MORPHOLOGY

Morphologies of epitaxial islands on a lattice-misfitted substrate被引量：1: 《Chinese Physics B》2008年第8期3008-3013,共6页汪建平周旺民王崇愚尹姝媛; Project supported by the National Natural Science Foundation of China (Grant No 90101004); Under certain growth conditions for systems with a film/substrate lattice misfit, the deposited material is known to aggregate into island-like shapes. We have obtained an analytical expression of the total free energ...; 关键词：epitaxial island free energy equilibrium shape

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