Chinese National Foundation of High Technology (2008AA8041606,2007AA804807, 2007AA804137);Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology (07DZ22302);Shanghai Educational Development Foundation (2007CG26);Program for Young Excellent Talents in Tongji University (2006KJ052);National Natural Science Foundation of China (50752001);Shanghai Committee of Science and Technology (055211010, 0652nm044, 07JC14052)
介绍了一种新制备低介电常数 SiO2薄膜的方法。以 TEOS 为前躯体、盐酸为催化剂、CTAB 作为模版剂,采用溶胶-凝胶法制备硅溶胶,以浸渍提拉法制备薄膜。采用 FITIR、XRD 和 AFM 等方法表征了薄膜,并用阻抗分析仪测量介电常数。结果表明,...