Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001);the Natural Science Foundation of Sichuan Province, China (Grant No. 2022NSFSC0886)。
A novel junction terminal extension structure is proposed for vertical diamond Schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses pa...