-
在结果中检索

检索结果分析

结果分析中...
检索条件："关键词=logic-in-memory "
共 条 记 录，以下是1-4

发文量、被引量趋势图

全选清除导出
参考文献引证文献引用追踪
视图：
排序：
显示条数：
Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure被引量：1
《InfoMat》2024年第2期107-117,共11页Jingjie Niu Sumin Jeon Donggyu Kim Sungpyo Baek Hyun Ho Yoo Jie Li Ji-Sang Park Yoonmyung Lee Sungjoo Lee 
Korean Government(MSIP),Grant/Award Numbers:RS-2023-00281048,2022R1A2C3003068,2022M3F3A2A01072215;supported by Samsung Electronics Co.,Ltd.(IO201215-08197-01).
The rapid advancement of AI-enabled applications has resulted in an increasing need for energy-efficient computing hardware.Logic-in-memory is a promising approach for processing the data stored in memory,wherein fast...
关键词：ferroelectric field-effect transistor in-plane ferroelectricity logic-in-memory out-of-plane ferroelectricity 
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications被引量：1
《Science China(Information Sciences)》2023年第10期80-100,共21页Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN 
supported by National Natural Science Foundation of China(Grant Nos.92064003,91964202)。
Hafnium oxide-based ferroelectric field-effect-transistors(FeFET),which combine super-steep logical switching and low power non-volatile memory functions,have significant potential for post-Moore integrated circuit in...
关键词：FERROELECTRIC FEFET hafnium oxide HZO logic-in-memory neuromorphic computing 
Logic-in-memory cell enabling binary and ternary Boolean logics
《Science China(Information Sciences)》2025年第2期366-375,共10页Jeongyun OH Juhee JEON Yunwoo SHIN Kyougah CHO Sangsig KIM 
partially supported by National Research Foundation of Korea Grant funded by the Korean Government(MSIT)(Grant Nos.RS-2023-00260876,2022M317A3046571);Samsung Electronics(Grant No.IO201223-08257-01);Brain Korea 21 Plus Project;a Korea University Grant。
In computing systems,processing and memory units have been integrated into logic-in-memory(LiM)to enhance the computational efficiency and performance.LiM has been attempted to perform not only binary but also ternary...
关键词：logic-in-memory reconfigurable channel modes ternary logic triple-gated feedback field-effect transistors 
Optically driven intelligent computing with ZnO memristor被引量：3
《Fundamental Research》2024年第1期158-166,共9页Jing Yang Lingxiang Hu Liufeng Shen Jingrui Wang Peihong Cheng Huanming Lu Fei Zhuge Zhizhen Ye 
This work was supported in part by the National Natural Science Foundation of China(U20A20209 and 61874125);the Strategic Priority Research Program of Chinese Academy of Sciences(XDB32050204);the Zhejiang Provincial Natural Science Foundation of China(LD19E020001 and LQ22F040003);the State Key Laboratory of Silicon Materials(SKL2021-03).
Artificial vision is crucial for most artificial intelligence applications.Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation...
关键词：MEMRISTOR All-optically controlling ZnO thin filmArtificial vision Nonvolatile neuromorphic computing Logic-in-memory 
全选清除导出
共1页<1>
检索报告 对象比较 聚类工具 使用帮助 返回顶部