Project supported by the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002);the Fundamental Research Funds for the Central Universities,China(Grant No.JY10000904009);the Major Program and State Key Program of the National Natural Science Foundation of China(Grant Nos.60890191 and 60736033)
In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double A1N buffer layers. The buffer layer consists of a low-temperature (LT)...
supported by the National Natural Science Foundation of China (Grant No. 0876061);Shaanxi 13115 Innovation Engineering of China (Grant No. 2008ZDKG-30);the defence Fund of China (Grant No. 9140A08050508)
This paper reports that the etching morphology of dislocations in 8° off-axis 4H-SiC epilayer is observed by using a scanning electronic microscope. It is found that different types of dislocations correspond with di...