非对称HALO结构的全耗尽SOI二维阈值电压解析模型  

Analytical 2-D Threshold Voltage Model for Fully Depleted SOI MOSFET with Asymmetric HALO

作　　者：许剑[1] 丁磊[1] 韩郑生[2] 钟传杰[1] 

机构地区：[1]江南大学信息工程学院,江苏无锡214000 [2]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第6期2166-2169,2173,共5页Chinese Journal of Electron Devices

摘　　要：在考虑了隐埋层与硅层的二维效应的基础上提出非对称HALO结构的全耗尽SOI二维阈值电压解析模型,该模型计算了在不同硅膜厚度,掺杂浓度,HALO区占沟道比例的条件下的阈值电压.模型结果与二维数值模拟软件MEDICI的模拟结果较好的吻合,该模型对HALO结构的物理特性和工艺设计有很好的指导意义.The paper proposed an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI)MOSFET with asymmetric HALO structure taking into consideration the two-dimensional effects in both SOI and buried-oxide layer. Based on the model, the threshold voltages are calculated as a function of SOI layer, doping density and HALO proportion, respectively. The predictions of the model are in good agreement with those of the two-dimension numerical simulator MEDICI. The results verify that the model of...

关 键 词：阈值电压 表面势 全耗尽SOI HALO结构 

分 类 号：TN386[电子电信—物理电子学]