GaN基HEMT电流崩塌现象相关的表面陷阱效应  

A Study on the Surface Trapping Process Related to the Current Collapse in the GaN Based HEMT by a New Measurement Method

作　　者：罗谦[1] 杜江锋[1] 卢盛辉[1] 周伟[1] 夏建新[1] 于奇[1] 杨谟华[1] 

机构地区：[1]电子科技大学微电子学与固体电子学学院,成都610054

出　　处：《固体电子学研究与进展》2008年第1期24-28,37,共6页Research & Progress of SSE

基　　金：国家自然科学基金(批准号:60072004)

摘　　要：采用脉冲测试方法研究了与GaN基HEMT电流崩塌相关的表面陷阱效应。对特制的无台面器件进行的实验证实了表面陷阱之间存在输运过程。数据表明,当栅应力持续时间足够长时,被充电的表面陷阱会达到某种稳态。该稳态是包含了陷阱俘获与释放过程的动态平衡态。The surface traping process related to current collapes in GaN based HEMT is investigated by a new measurement method.A special AlGaN/GaN HEMT without mesa fabrication is designed for this study.the experimental results confirm the existence of the surface transport process.The data analysis indicates that there is a dynamic equilibrium of the chraged surface while the stress is applied for enough time.

关 键 词：氮化镓 表面态 电流崩塌 

分 类 号：TN386[电子电信—物理电子学]