AlN薄膜的制备与刻蚀工艺研究  

Study of Fabrication and Etching Processes of AlN Thin Films

作　　者：于毅[1] 赵宏锦[1] 任天令[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《仪器仪表学报》2003年第z2期239-240,共2页Chinese Journal of Scientific Instrument

摘　　要：采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了具有较好(002)择优取向性的AlN薄膜。采用典型的半导体光刻工艺,利用刻蚀溶液成功地获得了AlN薄膜徽图形。较好地解决了AlN薄膜制备与加工中存在的关键问题,为高品质硅基AlN薄膜滤波器的实现奠定了良好的工艺基础。Aluminum nitride (AlN) thin films have been successfully deposited on Si(100) and Pt/Ti/Si(100) by DC magnetron reactive sputtering. The AlN films show perfect (002) preferential orientation and can be well etched using acid solution mixture after typical semiconductor lithographic process. The AlN films should be promising for silicon-based device application.

关 键 词：氮化铝薄膜 直流磁控反应溅射 择优取向 刻 蚀 

分 类 号：TN3[电子电信—物理电子学]