p型Al/6H-SiC肖特基二极管特性的研究  

A Study of the Characteristics of p-Type Al/6H-SiC Schottky Diode

作　　者：罗小蓉[1] 廖伟[1] 廖勇明[1] 洪根深[1] 龚敏[1] 

机构地区：[1]四川大学物理学系,成都610064

出　　处：《四川大学学报（自然科学版）》2001年第S1期53-56,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：作者研究了p型Al/6H -SiC肖特基二极管的基本制作工艺及其电学参数 .采用电流 -电压法 (I～V) ,测试了肖特基二极管的理想因子n和肖特基势垒高度b.对其基本电学参数n和b 的温度特性进行了研究 .分析了串联电阻对I～V特性的影响 .The manufacturing processes and electrical parameters of p-type 6H-SiC Schottky diodes have been studied.The ideality factors n and barrier heights  b of the Schottky diodes were measured with method of current-voltage( I～V ).Temperature characteristics of the ideality factor n and barrier height  b were present.Analyses of the effects of the series resistance on I～V characteristics of the Schottky diodes were carried out.

关 键 词：6H碳化硅 肖特基二极管 宽禁带半导体 

分 类 号：TN311.7[电子电信—物理电子学]