SU-8胶模去除技术  

Techniques for Remove of SU-8 Photoresist Mold

作　　者：崔峰[1] 靖向萌[1] 赵小林[1] 丁桂甫[1] 张卫平[1] 陈文元[1] 

机构地区：[1]上海交通大学微纳科学技术研究院微米/纳米加工技术国家重点实验室薄膜与微细加工技术教育部重点实验室,上海200030

出　　处：《微细加工技术》2007年第1期1-6,共6页Microfabrication Technology

基　　金：武器装备预研基金资助项目(9140A09020706JW0314);国家自然科学基金资助项目(60402003)

摘　　要：对各种去胶技术的原理、优缺点及其适用场合进行了综述,并结合本实验室的电铸Ni结构去胶试验,对强碱熔盐浴氧化、强酸氧化等经济有效的去胶方法进行了有益发展。最后介绍了SU-8辅助去胶技术,如辅助剥离牺牲层技术、辅助电铸结构抵抗去胶剥落的桩基形成技术。提出了一种与多层互连电路微制造兼容的金属桩基形成技术,并采用强酸氧化去胶方法在制作有互联电路及薄膜电极的基片上成功地集成了200μm厚的Ni结构。Remove of crosslinked SU-8 photoresist mold has been a particularly difficult challenge, which dramatically limits its wide application in making high aspect ratio MEMS structure. The remove techniques which are usually employed can be classified into three categories: (1) mechanical and physical techniques, (2) dry chemical techniques, and (3) wet chemical techniques. According to this classification, the remove mechanism, advantages and shortcomings, as well as application scope of each remove technique as mentioned above, were reviewed. By the experiments on remove SU-8 mold with the electroplated nickel structures, the efficient remove techniques with a low cost such as molten salt bath oxidizing and strong acid oxidizing were improved in our laboratory. Finally, the aided removal techniques such as stripping of the sacrificial layer and foundation construction for electroplated structures against ablation from the substrate were introduced. Additionally, a new metal foundation construction method which was compatible with multilevel interconnections microfabrication was proposed and an integration of the Ni structures with a thickness of 200 μm on a substrate with the interconnection circuits and thin film electrodes was successfully achieved by removing of the SU-8 mold using strong acid oxidizing method.

关 键 词：微机电系统 SU-8 去胶 高深宽比 桩基 

分 类 号：TN305.7[电子电信—物理电子学]