辅助镀膜离子源及立方氮化硼薄膜的制备研究  

Research of the Assisted Deposition Ion Source and thePreparation of c-BN Films

作　　者：蔡志海[1] 谭俊[2] 唐云[1] 张平[2] 

机构地区：[1]装甲兵工程学院材料科学与工程系,北京,100072 [2]中国机械工程学会表面工程研究所,北京,100072

出　　处：《装甲兵工程学院学报》2003年第1期18-21,共4页Journal of Academy of Armored Force Engineering

基　　金：国家自然科学基金资助项目(59971065)

摘　　要：为选出合适的辅助离子源进行沉积制备c-BN薄膜,通过对高能和低能辅助镀膜离子源的重要性能进行比较研究之后,在单晶Si基体进行应用制备立方氮化硼薄膜,用红外光谱(FTIR)及光电子能谱(XPS)分析技术,对不同辅助离子源制备沉积的薄膜,进行比较表征,得出结论:低能辅助镀膜离子源,比高能辅助镀膜离子源更适用于制备立方氮化硼薄膜.The assisted ion source played the most important role during the course of ion beam assisted deposition. So it is necessary to find the suitable ion source. In this paper, we compared the feature and performance between the high energy and low energy assisted deposition ion source. Then the preliminary results for preparing c-BN films in Si wafer are presented, the films prepared by different assisted ion source were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy. The results showed that the low energy assisted deposition ion source was more suitable for preparing c-BN films than the low energy assisted deposition ion source.

关 键 词：离子源 离子束辅助沉积 立方氮化硼薄膜 

分 类 号：TS913.7[轻工技术与工程]