LPCVD系统淀积多晶硅薄膜的发雾分析  

Analysis of Fogging During Deposition of Polysilicon Thin Film in LPCVD System

作　　者：张顾万[1] 龙飞[1] 阙蔺兰[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2002年第6期421-423,共3页Semiconductor Optoelectronics

摘　　要：叙述了采用LPCVD系统淀积多晶硅薄膜的机理 ,分析了在淀积多晶硅薄膜过程中引起发雾的因素 ,指出了保持LPCVD系统的洁净能有效消除在淀积多晶硅薄膜过程中出现的发雾现象。The mechanism of deposition polysilicon thin film in LPCVD system is described. The origin of the fogging during the process of deposition of polysilicon thin film is analyzed. A novel effective method to eleminate the fogging is proposed.

关 键 词：LPCVD 淀积 多晶硅 发雾 

分 类 号：TN491[电子电信—微电子学与固体电子学]