量子阱结构对GaN基紫光二极管性能的影响  

Effect of MQW Structure on Characteristic of GaN-Base Violet LED

作　　者：陆敏[1] 杨志坚[1] 潘尧波[1] 陆羽[1] 陈志忠[1] 张国义[1] 

机构地区：[1]北京大学物理学院人工微结构和介观物理国家重点实验室

出　　处：《稀有金属》2007年第z1期33-35,共3页Chinese Journal of Rare Metals

摘　　要：采用不同MQW结构在MOCVD系统上生长UV-LED外延片。对样品进行了X射线衍射、电注入发光(EL)和光致发光谱(PL)测试,通过优化LED器件材料的生长条件,获得了光发光特性一般而电发光特性优良的高质量多量子阱紫光LED外延片。GaN-base violet LEDs′ wafers with different MQW structures were grown by MOCVD.X-ray diffraction,electroluminence and photoluminence were applied to study the characteristic of wafers.Optimizing epitaxial process,high quality violet LEDs′ wafers with good electroluminence property have been grown.

关 键 词：紫光二极管 MOCVD GAN 量子阱结构 

分 类 号：TN304123[电子电信—物理电子学]