宽禁带半导体金刚石  

Wide Bandgap Diamond Semiconductor

作　　者：李发宁[1] 张鹤鸣[1] 戴显英[1] 朱国良[1] 吕懿[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《电子科技》2004年第7期43-49,共7页Electronic Science and Technology

摘　　要：较详细地叙述了当前国内外正处在研究热潮中的金刚石半导体的优越性质、发展状况及其应用和潜在的应用前景。同时分析和比较了金刚石薄膜的各种制备方法,可以看出微波等离子体化学汽相沉积法是较好的制备金刚石薄膜的生长技术,并且分析了该技术的特点和优势。该法在保持适当氩气氛和施加衬底负偏压下还可进一步提高金刚石膜的生长速率和质量。对于金刚石异质(在硅衬底上)成核的基本机理也进行了分析。最后,阐述了研究金刚石半导体薄膜目前需要解决的关键问题及其发展方向。This paper discusses in detail the current research, the advantages and the application of diamond semiconductors. An analysis of and comparison among different diamond fabricating methods shows that microwave-plasma chemical-vapor-deposition (MPCVD) is the most desirable at present. The characteristics and the advantages is discussed of this method, which is capable of improve the diamond growth rate and quality with proper argon atmosphere and negative substrate bias voltage. An analysis is also given of the mechanism of the diamond heterogeneous nucleation. The paper concludes with a discursion of the key issues and trends of the diamond semiconductor technology.

关 键 词：宽禁带 金刚石 MPCVD 大功率 

分 类 号：TN304.18[电子电信—物理电子学]