ECR等离子体刻蚀CVD金刚石膜的研究  

Study on etching chemical vapor deposition diamond film by electron cyclotron resonance plasma

作　　者：潘鑫[1] 马志斌[1] 吴俊[1] 

机构地区：[1]武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,武汉430073

出　　处：《金刚石与磨料磨具工程》2013年第1期23-25,30,共4页Diamond & Abrasives Engineering

基　　金：国家自然科学基金资助项目(10875093)

摘　　要：在自主设计的具有非对称磁镜场位形的ECR等离子体装置上进行CVD金刚石膜的刻蚀实验,研究了基片温度、工作气压和磁场位形三个工艺参数对刻蚀效果的影响。实验结果表明:通过此方法刻蚀的CVD金刚石膜,其晶粒顶端被优先刻蚀,表面粗糙度降低。实际数据显示,刻蚀温度为20℃和150℃时,后者的刻蚀效果更好;工作气压为2×10-3Pa和3×10-2Pa时,前者的刻蚀效果更好;磁场强度为0.2T和0.15 T时,前者的刻蚀效果更强。CVD diamond films were etched by plasma on a self-developed electron cyclotron resonance(ECR) device.Influences of substrate temperature,working pressure and magnetic field configuration on etching effect were studied.Results showed that the top of the grain on CVD film was etched preferentially and that the surface roughness Ra was reduced.The higher substrate temperature(150 ℃ compared with 20 ℃),the lower working pressure(2×10-3 Pa compared with 3×10-2 Pa),and the stronger magnetic field strength(0.2 T compared with 0.15 T) contributed to a better etching effect.

关 键 词：ECR等离子体 CVD金刚石膜 刻蚀 基片温度 工作气压 磁场位形 

分 类 号：TQ164[化学工程—高温制品工业]