离子注入大直径SI-GaAs电特性的研究  

Investigation on the Electrical Properties of Ion-Implanted Large Diameter SI-GaAs

作　　者：王娜[1] 王丽华[1] 孙卫忠[1] 郝秋艳[1] 刘彩池[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《半导体技术》2008年第S1期42-44,67,共4页Semiconductor Technology

基　　金：河北省自然科学基金(08B013);河北省科学与技术研究与发展指导计划(07215138)

摘　　要：用离子注入的方法把Si注入到大直径LEC SI-GaAs中,用霍尔测量方法研究了热处理条件对样品电特性的影响。发现在快速热退火温度为900℃、保温时间为5s时,样品获得了最好的电激活效率。当退火温度高于950℃时,样品导电类型由n型变为p型。同时研究了离子注入前后样品电参数的径向分布规律。发现注入前后样品的电阻率均成U型分布,迁移率均成W型分布,而载流子浓度均成M型分布。离子注入及退火工艺并没有改变大直径GaAs电参数的径向分布规律,但注入后的高温热处理提高了晶体的电学均匀性。The influence of rapid thermal annealing on the electrical properties of Si-implanted large diameter semi-insulating GaAs with the growth methods of liquid encapsulated Crochizoski(LEC)was investigated by Hall system.The results show that the electrical activity of Si-implanted GaAs annealed at 900 ℃ is the highest.Conductive type changes from n-type to p-type when the annealing temperature is higher than 950 ℃.The radial distributing of electrical parameters was also investigated.Resistivity radial distributing of as-grown samples and Si-implanted samples is U-shaped,mobility is W-shaped,and carrier concentration is M-shaped.The uniformity of electrical parameters radial distributing is improved after high-temperature heat treatment.

关 键 词：半绝缘砷化镓 离子注入 电特性 快速热退火 

分 类 号：TN304.23[电子电信—物理电子学]