高介电BST材料对MIS结构AlGaN/GaN HEMT器件性能的影响  

Influence of the High Dielectric BST Thin Film on the Performance of BST/AlGaN/GaN MIS HEMT

作　　者：周建军[1] 张继华[2] 陈堂胜[1] 任春江[1] 焦刚[1] 李忠辉[1] 陈辰[1] 杨传仁[2] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016 [2]电子科技大学微电子与固体电子学院,成都610054

出　　处：《半导体技术》2008年第S1期98-101,共4页Semiconductor Technology

基　　金：国家"973"重点基础研究项目(61363)

摘　　要：采用衬底同步加热磁控溅射的高介电BST材料作为栅绝缘层,研制了BST/Al GaN/GaNMIS结构HEMT器件。通过对器件直流和高频特性的测试以及与同样厚度Si N MIS结构对比,分析了高介电BST材料作为栅绝缘层对Al GaN/GaN MIS HEMT器件性能的影响。使用高介电BST材料作为栅绝缘层可以改善器件的线性特性和跨导特性,提高器件栅的正向工作电压,并有效降低Al GaN/GaN HEMT器件的夹断电压。同时,由于只引入很薄一层高介电材料作为栅绝缘层,器件的高频特性没有显著降低,BST/Al GaN/GaN MIS HEMT器件的电流增益截止频率达到23GHz。The BST/AlGaN/GaN MIS HEMT devices were fabricated with the sputtered high dielectric BST thin films with substrate synchronous heating as gate insulator.With measuring the direct current and high frequency performance of the devices,the performance of BST/AlGaN/GaN MIS HEMT and SiN/AlGaN/GaN MIS HEMT were compared and analyzed.With the thin high dielectric material BST as gate insulator,the linearity and characteristics of transconduc-tance of the BST/AlGaN/GaN MIS HEMT were improved.The cut-off voltage of the MIS HEMT was lowered,and the Gate voltage in the forward was increased.Although a high dielectric material is used,the high frequency performance of the devices is not decreased,and the measured cut-off frequency of the BST/AlGaN/GaN MIS HEMT is 23 GHz.

关 键 词：ALGAN/GAN HEMT BST MIS 高介电材料 

分 类 号：TN386[电子电信—物理电子学]