采用高分辨XRD对m面GaN位错特性的研究  

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

作　　者：宋黎红[1] 谢自力[1] 张荣[1] 刘斌[1] 李弋[1] 傅德颐[1] 张曾[1] 崔影超[1] 修向前[1] 韩平[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学江苏省光电信息功能材料重点实验室,南京210093

出　　处：《半导体技术》2008年第S1期175-178,共4页Semiconductor Technology

基　　金：国家"973"重点基础研究项目(2006CB6049);国家"863"高技术研究发展计划(2006AA03A103;2006AA03A118;2006AA03Z411);国家自然科学基金(60721063;60676057;60731160628);江苏省创新学者攀登项目(BK2008019)

摘　　要：利用高分辨X射线衍射方法,分析了在LiAlO2(100)面上采用金属有机化学气相沉积生长的m面GaN薄膜的微观结构和位错。采用对称面扫描和非对称面扫描等方法研究了晶面倾转角、面内扭转角、横向和垂直关联长度等,由此得到螺位错和刃位错密度。考虑到m面GaN的各向异性,将〈0001〉晶向定义为0°方向,与之垂直的方向为90°方向,分别按0°和90°两个不同方向进行X射线衍射的研究。0°方向和90°方向螺位错密度分别为1.97×1010、7.193×109cm-2,0°方向螺位错密度较大;0°和90°方向刃位错密度分别为3.23999×1010、7.35068×1010cm-2,90°方向刃位错密度较大,显示了非极性GaN薄膜各向异性的特征。The microstructure and dislocation of m-GaN film grown on LiAlO2(100)by metalorganic chemical vapor deposition(MOCVD)were studied using high resolution X-ray diffraction.The mosaic tilt,twist and correlation lengths of GaN film were determined by using symmetrical and asymmetrical reflections.Deducing from these results,the density of screw-type and edge-type dislocations can be obtained.Considering anisotropy of the m-GaN film,it was defined the 〈0001〉 direction as the direction of 0° and the direction which was perpendicular to the direction of 0° as the direction of 90° were studied.The sample properties were studied using X-ray diffraction in those two different directions,respectively.The screw-type dislocations density in 0° direction is 1.97×1010 cm-2,larger than that in 90°direction which is 7.193×109 cm-2.The edge-type dislocations density in 0° and 90° direction is 6.356 13×1010cm-2,7.991 35×1010cm-2,respectively.All these differences indicate the anisotropy of m-GaN.

关 键 词：GAN 位错 X射线衍射 有机化学气相淀积 各向异性 

分 类 号：TN304.055[电子电信—物理电子学]