AlGaN基日盲型紫外探测器的研制  

Solar-Blind Ultraviolet Detectors Based on AlGaN

作　　者：尹顺政[1] 李献杰[1] 蔡道民[1] 刘波[1] 冯志宏[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2008年第S1期224-226,共3页Semiconductor Technology

摘　　要：采用MOCVD方法在(0001)蓝宝石衬底上生长了高铝组分AlGaN材料,研制出日盲型AlGaNpin紫外探测器。介绍了器件的制备工艺,并对该器件进行了光电性能测试。测试结果表明,器件的正向开启电压约为4.6V,零偏动态电阻为1012～1013Ω,常温下,该器件在10V反向偏压下的暗电流约为15nA,响应峰值波长为275nm,日盲区/可见盲区响应比接近103。High Al content AlGaN was grown on(0001)sapphire substrate by MOCVD,and AlGaN based solar-blind pin UV photodetector was developed.The fabrication processing of the device was introduced.The current-voltage characteristics and spectral responsivity of the diodes were measured to characterize their optoelectronic performance.Measurement results show that its turn-on voltage is about 4.6 V,the dark current is about 15 nA at-10 V bias voltage;the peak responsivity wavelength is 275 nm,and rejection ratio of UVC/UVB is about 103.

关 键 词：日盲 紫外探测器 刻蚀 

分 类 号：TN23[电子电信—物理电子学]