一种新型垂直结构的Si基GaN绿光LED  

A novel Structure of Vertical GaN Green LEDs on Si Substrate

作　　者：卫静婷[1] 张佰君[1] 刘扬[1] 范冰丰[1] 招瑜[1] 罗睿宏[1] 冼钰伦[1] 王钢[1] 

机构地区：[1]中山大学光电材料与技术国家重点实验室,广州510275

出　　处：《半导体技术》2008年第S1期235-237,共3页Semiconductor Technology

基　　金：国家"863"高技术项目(2006AA03A129);广东省科技项目(2007A010501007;2007A010500011)

摘　　要：为了改善Si基LED的电流扩展问题以及降低其工作电压,阐述了一种工艺简单新型垂直结构的Si基GaN绿光LED(V-LED)。利用ICP在芯片上刻蚀出通孔结构露出n-GaN层和Si衬底层,在通孔上的n-GaN层和Si衬底层蒸镀金属,将n-GaN层和Si衬底层直接导通,形成第一n电极,在减薄的Si衬底背面蒸镀背电极用于形成第二n电极。并且通过改变探针的测试位置,在同一芯片上进行了V-LED与横向导电的LED结构(L-LED)的比较,V-LED展现出了良好的性能,其串联电阻相对降低了10%,在大电流注入的情况下,相对光输出强度也有了提高。In order to improve the current spreading and reduce the operator voltage,a novel structure of vertical GaN green light emitting diodes(V-LED)fabricated on Si substrate was reported.In this vertical structure,the epitaxy layer was directly etched by ICP to Si substrate and n-GaN layer,respectively,and formed a via-hole structure.Then metals were depositing onto the n-GaN and Si surface,and formed n electrode.And metals also were deposited onto the backside of thinned Si substrate to form another n-electrode.Compared with the conventio-nal lateral GaN-LEDs(L-LED)on the same chip by changing the position of probe,the V-LED shows better I-V characteristics.The series resistance decreased by 10%.Moreover,the light output intensity is also greatly improved at high injection current.

关 键 词：硅衬底 通孔 垂直结构LED 电流扩展 绿光LED N电极 

分 类 号：TN312.8[电子电信—物理电子学]