多晶硅发射极晶体管的数值分析及模拟  

Numerical analysis and simulations of polysilicon emitter transistor

作　　者：周长胜[1] 邹赫麟[1] 李建军 魏希文 

机构地区：[1]大连理工大学物理系

出　　处：《大连理工大学学报》1993年第4期482-488,共7页Journal of Dalian University of Technology

基　　金：国家"八五"重点科技攻关预研课题

摘　　要：通过对多晶硅发射极晶体管（ＰＥＴ）的多晶硅及界面层导电特性的分析， 得到单晶发射区边界上电流密度与少子浓度之间的关系式，并以此为自洽的 边界条件，在单晶区数值求解一组描述晶体管电学特性的微分方程，得到晶 体管内部电势分布和载流子分布以及ＰＥＴ的端电流特性．The electrical properties of the polysilicon and interfacial layer of polysilicon emitter transistor (PET) are studied provided that (1) minority carriers diffuse through the grains and grain boundaries while the drift current component neglected; (2) carriers pass through the interfacial layer by tunning. The dependence of the current density on the carrier concentration at the interface of the monosilicon is obtained. Furthmore, by using the self-consistent boundary condition, it can be solved that a group of differential equations which describe the electrical characteristics of the PET in the monosilicon region so as to get the potential and carrier distribution as well as the terminal poperties of the PET.

关 键 词：多晶硅 界面层 发射极晶体管 

分 类 号：TN325.2[电子电信—物理电子学]