深亚微米CMOS器件建模与BSIM模型  

Deep sub-micron CMOS device modeling and BSIM models

作　　者：陈志坚[1] 郑学仁[1] 姚若河[1] 李斌[1] 

机构地区：[1]华南理工大学微电子研究所,广东广州510640

出　　处：《微纳电子技术》2004年第6期44-48,共5页Micronanoelectronic Technology

摘　　要：介绍了深亚微米CMOS器件基于电荷模型、基于表面势模型和基于电导模型的建模方法及其优缺点,并以BSIM系列模型为例,讨论了BSIM系列模型特点及半导体工艺发展对CMOS器件建模方法的影响。The deep sub-micron CMOS device modeling approaches including charge-based model,surface potential based model and conductance-based model and their advantages and disadvantages are introduced. And taking example for BSIM,the features of the BSIM models are discussed. Finally,how the technology development may impact the CMOS modeling methodologies is summarized.

关 键 词：深亚微米 CMOS BSIM 电荷模型 表面势模型 电导模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]