多栅GaAs MESFET开关  

Multi-gate GaAs MESFET Switch

作　　者：洪倩[1] 陈新宇[1] 郝西萍[1] 陈继义[1] 蒋幼泉[1] 李拂晓[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2004年第2期212-214,248,共4页Research & Progress of SSE

摘　　要：论述多栅开关的结构和特点。开关设计中需要考虑的一个重要因素是提高开关功率处理能力的同时减小插损 ,多栅开关由于其特殊的结构 ,很好地解决了这一问题。采用多栅结构 ,设计的移动通讯用 DPDT开关在 DC-2 GHz:IL<0 .75 d B,ISO>1 3 d B,VSWR<1 .5 ,P- 1 >1 0 W。开关芯片面积小、成品率高、封装成本低 ,适宜批量生产 ,并已在手机上试装成功。This paper describes the structure and characteristic of multi-gate switch. A fundamental task in switch design is to maintain low insertion loss while improving power handling capacity. The multi-gate switch solves this problem because of its typical structure. A multi-gate DPDT switch designed for mobile communication is also presented with the performs:IL<0.75 dB,I SO>13 dB,VSWR<1.5,P -1>10 W @ DC-2 GHz. The advantages of this switch are: small die area, high yield, low cost package, suitable for mass production. This switch has passed the test on the handsets.

关 键 词：多栅 开关 金属半导体场效应晶体管 砷化镓 

分 类 号：TN386[电子电信—物理电子学]