Si掺杂对AlGaInP/GaInP多量子阱性能的影响  

Influence of Si-doping on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells

作　　者：李述体[1] 范广涵[1] 周天明[1] 王浩[1] 孙慧卿[1] 郑树文[1] 郭志友[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《发光学报》2004年第4期375-378,共4页Chinese Journal of Luminescence

基　　金：国家科技攻关计划 ( 0 0 0 68) ;华南师范大学博士启动基金 ( 660 119)资助项目

摘　　要：采用LP MOCVD技术在n GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征 ,研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明 :掺Si能大大提高 (Al0 .3 Ga0 .7) 0 .5In0 .5P/Ga0 .5In0 .5P多量子阱的发光强度。相对于未故意掺杂的样品 ,多量子阱垒层掺Si使多量子阱的发光强度提高了 13倍 ,阱层和垒层均掺Si使多量子阱的发光强度提高了 2 8倍。外延片的X射线双晶衍射测试表明 。The Si-doping AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 low pressure metalorganic chemical vapor deposition (MOCVD). Properties of these wafers were investigated by double crystal X-ray diffraction and photoluminescence measurement. The influence of Si-doping on the characteristics of AlGaInP/GaInP multiple quantum wells was studied. The GaAs substrates used were cut 15 degree off the (100) plane towards the [011] direction. TMGa, TMIn, TMAl, AsH_3, and PH_3 were used as Ga, In, Al, As, P precursors, respectively. CP_2Mg and SiH_4 were used as p and n type doping reagents. The growth temperature was 620～720 ℃. The sequence of layers grown on n-GaAs substrate was, 0.5 μm n-GaAs buffer with the carrier concentration of about 5×10^(17) cm^(-3), 15 periods Al_(0.5)Ga_(0.5)As∶Si/AlAs∶Si DBR, 0.5 μm n-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 3×10^(17) cm^(-3),(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P/Ga_(0.5)In_(0.5)P multiple quantum wells, 0.5 μm p-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer with carrier concentration of about 6×10^(17)cm^(-3), and 5 μm p-GaP current spreading layer with carrier concentration of about 5×10^(18) cm^(-3). Three AlGaInP LED wafers with different Si doping in 10 periods MQW were studied. The Sample A is unintentional doping 10 periods MQW wafer. The Sample B is Si-doping in the barriers wafer. The Sample C was Si-doping in the barriers and wells wafer. The doping dose was the same as that of the 0.5 μm n-(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P cladding layer.The (004) X-ray diffraction curves of these three wafers with different Si doping in 10 periods MQW were obtained. Besides the peaks of GaAs and AlGaInP, two satellite peaks are observed in all samples, which are listed by dashed line. It indicates that the interface quality of MQW does not become worse by Si doping. The periods of Sample A, B and C is 14.6, 15.2, 15.7 nm, respectively. The growth rate of MQW increases with the Si-doping. In

关 键 词：ALGAINP AlGaInP/GaInP多量子阱 X射线双晶衍射 Si掺杂 光致发光 

分 类 号：O472.3[理学—半导体物理]