掺杂与Al组分对AlGaInP四元系LED发光效率的影响  

Effect of p-doping Density and Al Composition upon Luminescent Efficiency

作　　者：陈贵楚[1] 范广涵[1] 陈练辉[1] 刘鲁[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《发光学报》2004年第4期379-382,共4页Chinese Journal of Luminescence

基　　金：国家科技攻关计划资助项目 ( 0 0 0 68)

摘　　要：在AlGaInP四元系双异质结发光二极管 (DH LED)的材料生长过程中 ,限制层的Al组分与p型掺杂浓度的确定有较大的随意性 ,这对LED的发光不利。通过分析载流子在发光二极管 (LED)双异质结中的输运情况 ,得到了在不同的p型掺杂程度下 ,限制层Al组分与LED发光效率的关系 ,从而可以探索p型掺杂与Al组分对发光效率影响的规律 。In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes,the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED,and the principle of doping density and Al composition vs. luminescent efficiency can be derived.So this conclusion would have a guide to device design and MOCVD epitaxy.

关 键 词：ALGAINP AL组分 P型掺杂 发光效率 

分 类 号：TN209[电子电信—物理电子学]