溅射技术在制备SiC薄膜中的应用  

Application of sputtering technology in the SiC film preparation

作　　者：李娟[1] 刘技文[1] 王玉红[2] 孙永昌[2] 

机构地区：[1]天津理工学院材料物理所,天津300191 [2]天津理工学院材料科学与工程学院,天津300191

出　　处：《天津理工学院学报》2004年第3期22-27,共6页Journal of Tianjin Institute of Technology

基　　金：国家自然科学基金资助项目(10074049);天津市自然科学基金资助项目(023801611)

摘　　要：近20年以来,薄膜科学得到迅速发展,不仅得益于薄膜材料可能具有力、热、光、电、磁、仿生或化学等各种特性,可以使器件小型化,而且也得益于各种薄膜制备手段的进步.其中,溅射技术已成为几种重要的制备薄膜的手段之一.广泛应用于制备超硬涂层、耐磨涂层、耐腐蚀涂层以及具有电学、光学、半导体等性质的薄膜,SiC薄膜就是其中很有发展前景的一种.本文将介绍溅射原理、薄膜制备技术,着重介绍溅射法在制备SiC薄膜中的应用和前景展望.In recent twenty years,film science has made great progress,which profits not only from the properties of strength,thermology,luminescence,electricity,magnetism,bionics,chemistry of film materials and device miniaturization , but also from the improvement of method of film preparation. Especially, sputtering technology has become one of the most important film preparation methods and widely used to prepare super hard, wear resistant and corrosion resistant coating and films with electric, optical or semiconducting properties. SiC is regarded as one of the most prospering films. In this paper, the principle of sputtering technology and its application in SiC film preparation are introduced. The sputtering technology and SiC future are reviewed.

关 键 词：SIC薄膜 制备 半导体薄膜 射频溅射 反应溅射 

分 类 号：TN304.24[电子电信—物理电子学] TN304.055