蓝宝石衬底AlGaN/GaN功率HEMTs研制  

Development of AlGaN/GaN Power HEMTs Grown on Sapphire Substrates

作　　者：邵刚[1] 刘新宇[1] 和致经[1] 刘键[1] 魏珂[1] 陈晓娟[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子研究所四室,北京100029

出　　处：《电子器件》2004年第3期381-384,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目 ( 2 0 0 2 CB3 1 1 90 3 );中国科学院重点创新资助项目 ( KGCX2 -SW-1 0 7)

摘　　要：基于蓝宝石衬底的高微波特性 Al Ga N/Ga N HEMTs功率器件 ,器件采用了新的欧姆接触和新型空气桥方案。测试表明 ,器件电流密度 0 .784A/mm,跨导 1 97m S/mm,关态击穿电压 >80 V,截止态漏电很小 ,栅宽 1 mm的器件的单位截止频率 ( f T)达到 2 0 GHz,最大振荡频率 ( fmax) 2 8GHz,2 GHz脉冲测试下 ,栅宽 0 .75 mm器件 ,功率增益1 1 .8d B,输出功率 3 1 .2 d Bm,功率密度 1 .75 W/mm。This paper report a high performance AlGaN/GaN power Heterostructure Field Effect Transistors(HEMTs) based on sapphire substrate. New ohmic contact structure and Air-bridge are employed to improve microwave power performance. From measurement, a saturation current density of 0.784 A/mm, a peak transconductance of 197 mS/mm, a off-state breakdown voltage of more than 80 V and a small leakage current under cut-off state are obtained. The 1mm gate width power device also displays a unit cutoff frequency(f_T) of 20 GHz and a maximum oscillation frequency f__max of 28 GHz. A packaged 0.75 mm gate width device exhibits a output power 31.2 dBm, a power gain 11 dB in 2 GHz under pulse measurement.

关 键 词：ALGAN/GAN HEMT 微波功率 单位截止频率 

分 类 号：TN325[电子电信—物理电子学]