新型槽栅nMOSFET凹槽拐角效应的模拟研究  

Study on the corner effect in new grooved-gate nMOSFET

作　　者：童建农[1] 邹雪城[1,2] 沈绪榜[1] 

机构地区：[1]华中科技大学图像所IC设计中心 [2]华中科技大学电子科学与技术系,武汉430073

出　　处：《物理学报》2004年第9期2905-2909,共5页Acta Physica Sinica

摘　　要：应用二维器件仿真程序PISCES Ⅱ ,模拟计算了新型槽栅结构器件中凹槽拐角效应的影响与作用 ,讨论了槽栅结构MOSFET的沟道电场特征及其对热载流子效应、阈值电压特性等的影响 .槽栅结构的凹槽拐角效应对抑制短沟道效应和抗热载流子效应是十分有利的 ,并且拐角结构在 4 5°左右时拐角效应最大 .调节拐角与其他结构参数 ,器件的热载流子效应、阈值电压特性、亚阈值特性。The function and influence of the corner effect in grooved gate MOSFET is simulated using classical two dimensional device simulator PISCES Ⅱ. The electric field of the channel in grooved gate metal organic semiconductor field effect transistor(MOSFET) and impact on the threshold and hot carrier effect are studied. The corner effect is very favorable to suppressing short channel effects and hot carrier effects. The impact of corner effect on grooved gate MOSFET is changed with the change of the corner, and is the largest at about 45°. Therefore,the grooved gate MOSFET has a very great application prospect in deep submicro device architecture.

关 键 词：槽栅MOSFET 拐角效应 阈值电压 热载流子退化 沟道电场 结构参数 

分 类 号：TN432[电子电信—微电子学与固体电子学]