离子轰击增强金刚石膜与Si衬底结合力的进一步研究(英文)  

Further Study on Improvement of Adhesive Force of Diamond Films with Si Substrates by Ion Bombardment

作　　者：徐幸梓[1] 刘天模[1] 曾丁丁[1] 张兵[2] 刘凤艳[2] 

机构地区：[1]重庆大学材料科学与工程学院,重庆400044 [2]北京工业大学应用数理学院,北京100022

出　　处：《人工晶体学报》2004年第4期679-682,共4页Journal of Synthetic Crystals

摘　　要：由于金刚石与Si有较大的表面能差 ,利用化学气相沉积 (CVD)制备金刚石膜时 ,金刚石在镜面光滑的Si表面上成核困难 ,而负衬底偏压能够增强金刚石在镜面光滑Si表面上的成核 ,表明金刚石核与Si表面的结合力也得到增强。本文分析衬底负偏压引起的离子轰击对Si表面产生的影响之后 ,基于离子轰击使得Si衬底表面产生了微缺陷 (凹坑 )增大了金刚石膜与Si衬底结合的面积 ,理论研究了离子轰击对金刚石膜与Si衬底结合力的影响。Owing to the large surface energy difference of diamond with silicon, the diamond nucleation on the mirror-polished silicon surface is difficult when diamond films are prepared by chemical vapor deposition. However, the nucleation can be enhanced by a negative substrate bias, indicating that the adhesive force of diamond nuclei on Si surface is improved. The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is enlarged. Based on these results, the influence of ion bombardment on Si surface with the negative bias was analyzed and the effect of ion bombardment on the adhesive force between diamond film and Si substrate was theoretically studied.

关 键 词：化学气相沉积 制备 金刚石膜 成核 离子轰击 凹坑 SI衬底 结合力 硅 

分 类 号：O484[理学—固体物理]