以SiCl_4为源气体用PECVD技术低温快速生长多晶硅薄膜  

Study of fast growth of polycrystalline silicon film from SiCl_4/H_2 by PCVD at low-temperature

作　　者：黄锐[1] 林璇英[1] 余云鹏[1] 林揆训[1] 姚若河[2] 黄文勇[3] 魏俊红[1] 王照奎[1] 余楚迎[1] 

机构地区：[1]汕头大学物理系,广东汕头515063 [2]华南理工大学应用物理系,广东广州510641 [3]广东韩山师范学院物理系,广东潮州521041

出　　处：《功能材料》2004年第5期613-614,617,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(G2000028208)

摘　　要：　报道了以SiCl4和H2为气源,用等离子体增强化学气相沉积技术,在小于300℃的低温下快速生长多晶硅薄膜。实验发现,生长速率强烈依赖于放电功率、H2/SiCl4流量比和衬底温度,而薄膜的晶化度只依赖于放电功率和H2/SiCl4流量比,与衬底温度的关系不大。通过控制和选择工艺条件,我们获得了生长速率高达0.35nm/s,晶化度高于75%的多晶硅薄膜。薄膜的暗电导率和光电导率分别达到10-4S-1·cm-1和10-3S-1·cm-1。Polycrystalline silicon films were fabricated at high deposition rate with high crystalline fraction under low-temperature of 200-350°C from SiCl4/H2 mixture gases by plasma chemical vapor deposition technique. The deposition rate is affected not only by the RF power and the flow ratio of H2/SiCl4 but also by the substrate temperature, while the crystalline fraction mainly depend on the RF power and the flow ratio of H2/SiCl4, By combining deposition conditions of the flow ratio of H2/SiCl4, RF power and the substrate temperature, poly-Si films were obtained at high deposition rate of 0.35 nm/s with the crystalline fraction of 75% under low temperature of 300°C. Dark conductivity and photoconductivity achieved for the poly-Si films were -10-4S&middotcm-1 and -10-3S&middotcm-1, respectively.

关 键 词：多晶硅薄膜 SiCl4 生长速率 晶化度 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]