n型掺杂半导体In/Nb-SrTiO_3金属异质结变温J～V特性的研究  

THE n-TYPE METAL-SEMICONDUCTOR In/Nb-SrTiO_-3 SCHOTTKY BARRIER DIODES

作　　者：刘大猛[1] 连贵君[1] 熊光成[1] 

机构地区：[1]北京大学物理学院,北京100871

出　　处：《低温物理学报》2004年第4期358-363,共6页Low Temperature Physical Letters

摘　　要：利用Nb替代Ti的导电Nb SrTiO3(Nb STO)衬底我们制备得到了Nb STO/金属异质结并测量了异质结的J～V曲线 .氧化物半导体Nb STO/金属异质结的J～V曲线显示出与由Schottky势垒模型描述的理想半导体 /金属二极管有很多不同 .利用对数据拟合的结果 ,我们讨论了与理想半导体模型的差别 .在Nb STO作为新的氧化物半导体材料被引入器件时 。The In/Nb-doped SrTiO-3 Schottky Junctions, fabricated using a proper surface treatment of the STO:Nb and in situ deposition of In, were investigated in detail. Current-voltage characteristics have shown the differences with the ideal Schottky Junctions about temperature-dependent and voltage-dependent changes, Using a Schottky transport theory, we have performed computer simulation of the parameters to analyze the differences of the Schottky Junctions. As the new oxides semiconductor material there should be many departures in the Schottky junctions.

关 键 词：异质结 氧化物半导体 衬底 二极管 掺杂 势垒 器件 理想 对数 数据拟合 

分 类 号：O471[理学—半导体物理]