接触式串联射频MEMS开关的工艺研究  

Technological Study of Fabrication of RF MEMS in Series

作　　者：于映[1] 罗仲梓[2] 翁心桥[2] 

机构地区：[1]福州大学电子系,福州350002 [2]厦门大学萨本栋微机电研究中心,厦门360003

出　　处：《真空科学与技术学报》2004年第4期306-308,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金青年基金资助项目 ( 60 3 0 10 0 6) ;福建省自然科学基金资助项目 (A0 3 10 0 12 )

摘　　要：本文采用MEMS工艺制作接触式串联射频开关 ,射频开关采用双端固定的悬臂梁结构 ,悬梁为PECVD制作的SiN薄膜 ,溅射Au制作共平面波导 ,聚酰亚胺作为牺牲层 ,运用等离子体刻蚀法释放牺牲层。研究了悬梁、共平面波导以及电极的制作工艺 ,并分析了牺牲层的制作和刻蚀工艺对开关结构的影响。Fabrication technology of RF MEMS in series was studied.The fixed-fixed beam structure were used in the switches,which consist of SiN suspending membranes grown by plasma enhanced chemical vapor deposition(PECVD),co-planar wave-guide coated with gold film,and a polyimide sacrificial layer released by O 2 plasma etching.The fabrication of SiN membrane,the electrodes and the coplanar wave-guide were discussed,respectively.And how the growth of the sacrificial layer and the chemical etching affect the performance of switches was also discussed.

关 键 词：共平面波导 牺牲层 刻蚀工艺 射频开关 MEMS开关 接触式 PECVD 串联 开关结构 电极 

分 类 号：TB52[理学—物理] TM564[理学—声学]