In掺杂ZnO薄膜的制备及其特性研究  

Preparation and Study of Properties of Indium-Doped ZnO Films on Si Substrates

作　　者：朋兴平[1] 杨映虎[1] 宋长安[1] 王印月[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《光学学报》2004年第11期1459-1462,共4页Acta Optica Sinica

基　　金：甘肃省自然科学基金 (ZS0 11 A2 5 0 5 0 C)资助课题

摘　　要：采用射频反应溅射技术在硅 (10 0 )衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明 ,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征 ,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比 ,掺InZnO薄膜具有高度的C轴择优取向 ,同时样品的晶格失配较小 ,与标准ZnO粉末样品之间的晶格失配仅为 0 .16 % ;掺InZnO薄膜表面平滑 ,表面最大不平整度为 7nm。在掺In样品的光致发光谱中观察到了波长位于 4 15nm和 4 33nm处强的蓝紫光双峰 ,对掺In样品的蓝紫双峰的发光机理进行了讨论 ,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology. Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films. The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed. Compared with undoped ZnO film, In-doped ZnO film has highly c-axis oriented and the small lattice mismatch (0.16%). Surface of doped thin film is smooth and flat; the maximum roughness surface of sample is only 7nm. The blue-violet emission bi-peak locating at 415 nm and at 433 nm is observed in photoluminescence spectra of indium-doped ZnO films at room temperature. The mechanism of blue-violet emission bi-peak was discussed, and the blue-violet emission bi-peak is assigned to come from the In substitute impurity and Zn interstitial defects of ZnO.

关 键 词：ZNO薄膜 双峰 掺杂 晶格失配 样品 光致发光谱 光致发光特性 衬底 反应溅射 发光机理 

分 类 号：O484[理学—固体物理] TN304.21[理学—物理]