GaAs表面Ga、As的比对GaAs MESFET击穿电压的影响  

Effect of Ga、As Atom Ratio of GaAs Surface on the Breakdown of GaAs MESFET

作　　者：李云[1] 张利民[1] 李岚[1] 张绵[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2004年第12期38-40,共3页Semiconductor Technology

摘　　要：通过用XPS分析GaAs MESFET肖特基势垒制作前后的表面情况,发现GaAs表面Ga、As的比,对GaAs MESFET击穿电压有着明显的影响, 表面Ga、As比的明显偏离将导致击穿电压的下降。分析了GaAs表面Ga、As比偏离的原因,提出了改进的方法。The surface state of GaAs MESFET before and after gate fabrication are analyzed byXPS, and find that the Ga, As atom ratio of GaAs surface has obvious influennce on the breakdownvoltage of GaAs MESFET. The deviation of Ga, As ratio will cause the reduction of the breakdownvoltage. The deviation reason of Ga, As ratio are analysed and put forward the way to improve thefeature of it.

关 键 词：GAAS MESFET 击穿 偏离 

分 类 号：TN386[电子电信—物理电子学]