高k栅介质MOSFET电特性的模拟分析  

Simulation and Analysis of Electronic Characteristic of MOSFET with High-k Dielectric

作　　者：陈卫兵[1] 徐静平[1] 邹晓[1] 李艳萍[1] 赵寄[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《固体电子学研究与进展》2004年第4期417-421,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助 (60 3 760 19);湖北省自然科学基金资助 (2 0 0 3ABA0 87)

摘　　要：对高k栅介质MOSFET栅极漏电进行研究 ,确定栅介质的厚度 ,然后使用PISCES Ⅱ模拟器对高k栅介质MOSFET的阈值电压、亚阈斜率和Idsat/Ioff进行了详细的分析研究。通过对不同k值的MOSFET栅极漏电、阈值电压、亚阈斜率和Idsat/Ioff的综合考虑 ,得出选用k <5 0且Tk/L≤ 0 .2的栅介质能获得优良的小尺寸MOSFET电性能。In this paper,the high- k gate dielectric thickness was determined by research of the gate tunnel current of MOSFET and a series of electronic characteristics of MOSFET with high- k gate dielectrics,such as threshold voltage,sub-threshold slope and I dsat / I off ,are analyzed and researched using PISCES-Ⅱ simulation in detail.The simulated result shows MOSFET’s electric characteristic is more excellent when the gate dielectrics with k <50 and T k/ L <0.2 are selected.

关 键 词：高K栅介质 金属-氧化物-半导体场效应晶体管 阈值电压 亚阈斜率 

分 类 号：TN386.1[电子电信—物理电子学]