MOCVD AlGaAs/GaAs HBT材料生长中基区、发射区结偏位的分析与控制  

Analysis and Control of Deviation of Base-emitter P-N Junction Relative to Heterojunction in LP-MOVPE Growth of AlGaAs/GaAs HBT Material

作　　者：王向武[1] 李肖[1] 张岚[1] 黄子乾[1] 潘彬[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2004年第4期546-548,共3页Research & Progress of SSE

摘　　要：分析了MOCVDAlGaAs/GaAsHBT外延材料生长中基区、发射区异质结界面与P N结界面产生偏离的原因 ,计算了外延生长参数对结偏离的影响 ,得到了对于C、Mg及Zn作为P型掺杂剂时 ,使得结偏位为 0时所需生长的GaAsspace层厚度 ,它们分别为 1～ 1.5nm、3～ 4nm及 12～ 15nm。计算与器件研制结果基本相符。The reasons of deviation of base-emitter P-N junction relative to the AlGaAs/GaAs heterojunction in LP-MOVPE growth of AlGaAs/GaAs HBT were analyzed. The effect of growth parameters on the deviation was calculated. The optimum thicknesses of space layer were 1.0～1.5 nm, 3.0～4.0 nm and 13～15 nm for C, Mg and Zn dopant, respectively. The values calculated were in agreement with the results from the devices.

关 键 词：异质结双极晶体管 金属有机化合物气相淀积 结偏位 

分 类 号：TN322.8[电子电信—物理电子学]