氧气氛退火对BST薄膜电阻热敏特性的影响  

BST Thin-film Resistor: Effect of Annealing Under Oxygen on Thermosensitive Characteristics

作　　者：刘玉荣[1] 李观启[1] 罗坚[1] 李斌[1] 黄美浅[1] 

机构地区：[1]华南理工大学应用物理系,广东广州510640

出　　处：《电子元件与材料》2004年第12期51-53,共3页Electronic Components And Materials

摘　　要：利用氩离子束镀膜技术在 SiO2/Si 衬底上淀积 BST 薄膜,研究了氧气氛下退火对 BST 薄膜热敏特性的影响。结果表明,当退火温度不太高时(≤600℃),薄膜热敏特性随退火温度升高而变差;但当退火温度较高时(>600℃),薄膜热敏特性随退火温度升高而得到改善。在室温至 200℃范围内 BST 薄膜具有较好的热敏特性,其温度系数最大值为–5.3 %℃–1。并利用 SEM 和 AES 分析了退火条件对薄膜电阻热敏特性的影响机理。Ba1- SrxTiO3 thin film was deposited on a SiO2/Si substrate by the argon ion-beam sputtering. The effects of x annealing under O2 on thermosensitive characteristics of the thin film were studied, and the results show that when the annealing temperature is not too high (≤600℃), the higher the annealing temperature, the lower is the thermosensitive. when the annealing temperature is high (>600℃), the higher the annealing temperature, the higher is the thermosensitive. From room temperature to 200℃, the thin film has good thermosensitive characteristic with a maximum temperature coefficient of –5.3% ℃–1. Moreover, the effects of annealing condition on thermosensitive properties of the thin film resistor are analyzed using SEM and AES measurement.

关 键 词：无机非金属材料 BST薄膜 NTC热敏电阻 热敏特性 退火处理 

分 类 号：O484.4[理学—固体物理]