含有δ掺杂层的SiGe pMOS量子阱沟道空穴面密度研究  

Hole-sheet-density in SiGe pMOS quantum well with δ-doping-layer

作　　者：胡辉勇[1] 张鹤鸣[1] 戴显英[1] 吕懿[1] 舒斌[1] 王伟[1] 姜涛[1] 王喜媛[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《物理学报》2004年第12期4314-4318,共5页Acta Physica Sinica

基　　金：西安电子科技大学青年科研工作站(批准号 :0 3 0 11)资助的课题~~

摘　　要：建立了含有δ掺杂层的SiGepMOS器件量子阱沟道中空穴面密度的静态与准静态物理模型 ,并对该模型进行了数值分析 .讨论了静态时器件量子阱空穴面密度与δ掺杂层杂质浓度和本征层厚度的关系 ,阈值电压VT 与δ掺杂层杂质浓度NA、量子阱沟道载流子面密度Ps 及本征层厚度di 等参数间的关系 .同时还讨论了准静态时量子阱空穴面密度P′sIn this paper,static state and quasi-static state models of quantum well channel hole-sheet-density of SiGe p-metal-oxide-semiconductor with δ -doping-layer are established and analyzed. The relations between hole-sheet-density and δ -doping-layer concentration,between hole-sheet-density and un-doping layer thickness at static state are also discussed,and the relations of the threshold voltage to the δ -doping-layer concentration,the quantum-well channel hole-sheet-density and the thickness of the un-doping layer are discussed. At last,the relation of the quantum-well channel hole-sheet-density to gate-voltage for the quasi-static state is discussed.

关 键 词：Δ掺杂 量子阱 MOS器件 本征 沟道 杂质浓度 阈值电压 空穴 准静态 载流子 

分 类 号：TN431[电子电信—微电子学与固体电子学]